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Storage Temperature ............................65°C to +150°C Ambient Temperature with Power Applied........................................55°C to +125°C Supply Voltage to Ground Potential..............0.5V to +7.0V DC Voltage Applied to Outputs[12] in High-Z State ......................................0.5V to VCC +0.5V
DC Input Voltage [12] ...........................0.5V to VCC +0.5V
Output Current into Outputs (LOW).............................20 mA Static Discharge Voltage...........................................> 2001V (per MIL-STD-883, Method 3015) Latch-up Current ....................................................> 200 mA
CY7C43686AV Features
3.3V high-speed, low-power, First-In First-Out (FIFO) memories with three independent ports (one bidirec- tional *36, and two unidirectional *18) 1K *36/*18*2 (CY7C43646AV) 4K *36/*18*2 (CY7C43666AV) 16K *36/*18*2 (CY7C43686AV) 0.25-micron CMOS for optimum speed/power High-speed 133-MHz operation (7.5-ns Read/Write cycle times) Low power -ICC = 60 mA -ISB = 10 mA