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(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ...................................65°C to +150°C Ambient Temperature with Power Applied...............................................55°C to +125°C Supply Voltage to Ground Potential ............... 0.5V to +7.0V DC Voltage Applied to Outputs in High Z State[2] ......................................0.5V to VCC+0.5V DC Input Voltage[2]...................................0.5V to VCC+0.5V Output Current into Outputs (LOW) .............................20 mA Static Discharge Voltage ........................................... >2001V (per MIL-STD-883, Method 3015) Latch-Up Current..................................................... >200 mA
CY7C43644AV Features
• 3.3V high-speed, low-power, bidirectional, First-In First- Out (FIFO) memories w/ bus matching capabilities • 1Kx36x2 (CY7C43644AV) • 4Kx36x2 (CY7C43664AV) • 16Kx36x2 (CY7C43684AV) • 0.25-micron CMOS for optimum speed/power • High-speed 133-MHz operation (7.5-ns read/write cycle times) • Low power -ICC= 60 mA -ISB= 12 mA • Fully asynchronous and simultaneous read and write operation permitted • Mailbox bypass register for each FIFO • Parallel and Serial Programmable Almost Full and Almost Empty flags • Retransmit function • Standard or FWFT mode user selectable • Partial Reset • Big or Little Endian format for word or byte bus sizes • 128-Pin TQFP packaging • 3.3V pin-compatible, feature enhanced, density upgrade to IDT723624/34/44 family • Easily expandable in width and depth