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(Above which the useful life may be impaired. For user guidelines, not tested.) Storage Temperature ..............................–65°C to +150°C Ambient Temperature with Power Applied..........................................–55°C to +125°C Supply Voltage to Ground Potential ............... –0.5V to +4.6V DC Voltage Applied to Outputs in High-Z State............................–0.5V to VCC+0.5V DC Input Voltage[7] ................................–0.5V to VCC+0.5V Output Current into Outputs (LOW)............................. 20 mA Static Discharge Voltage.......................................... > 1100V Latch-up Current.................................................... > 200 mA
CY7C028V Features
• True Dual-Ported memory cells which allow simultaneous access of the same memory location • 32K x 16 organization (CY7C027V) • 64K x 16 organization (CY7C028V) • 32K x 18 organization (CY7C037V) • 64K x 18 organization (CY7C038V) • 0.35-micron CMOS for optimum speed/power • High-speed access: 15/20/25 ns • Low operating power —Active: ICC = 115 mA (typical) —Standby: ISB3 = 10 μA (typical) • Fully asynchronous operation • Automatic power-down • Expandable data bus to 32/36 bits or more using Master/ Slave chip select when using more than one device • On-chip arbitration logic • Semaphores included to permit software handshaking between ports • INT flag for port-to-port communication • Separate upper-byte and lower-byte control • Dual Chip Enables • Pin select for Master or Slave • Commercial and Industrial temperature ranges • 100-pin Lead(Pb)-free TQFP and 100-pin TQFP