CAT28F102, CAT28F102AN12, CAT28F102FN-90 Selling Leads, Datasheet
MFG:CSI Package Cooled:PLCC D/C:PLCC
CAT28F102, CAT28F102AN12, CAT28F102FN-90 Datasheet download
Part Number: CAT28F102
MFG: CSI
Package Cooled: PLCC
D/C: PLCC
MFG:CSI Package Cooled:PLCC D/C:PLCC
CAT28F102, CAT28F102AN12, CAT28F102FN-90 Datasheet download
MFG: CSI
Package Cooled: PLCC
D/C: PLCC
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PDF/DataSheet Download
Datasheet: CAT28F102
File Size: 162974 KB
Manufacturer: CATALYST [Catalyst Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: CAT102
File Size: 83422 KB
Manufacturer: CATALYST [Catalyst Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: CAT102
File Size: 83422 KB
Manufacturer: CATALYST [Catalyst Semiconductor]
Download : Click here to Download
The CAT28F102 is a high speed 64K x 16-bit electrically erasable and reprogrammable Flash memory ideally suited for applications requiring in-system or after-sale code updates. Electrical erasure of the full memory contents is achieved typically within 0.5 second.
It is pin and Read timing compatible with standard EPROM and E2PROM devices. Programming and Erase are performed through an operation and verify algorithm. The instructions are input via the I/O bus, using a two write cycle scheme. Address and Data are latched to free the I/O bus and address bus during the write operation.
The CAT28F102 is manufactured using Catalyst's advanced CMOS floating gate technology. It is designed to endure 100,000 program/erase cycles and has a data retention of 10 years. The device is available in JEDEC approved 40-pin DIP, 44-pin PLCC, or 40-pin TSOP packages.
Temperature Under Bias ............................................... .... 55°C to +95°C
Storage Temperature ...................................................... 65°C to +150°C
Voltage on Any Pin with Respect to Ground(1) ............ 0.6V to +VCC + 2.0V
Voltage on Pin A9 with Respect to Ground(1) ....................... 2.0V to +13.5V
VPP with Respect to Ground during Program/Erase(1) ......... 0.6V to +14.0V
VCC with Respect to Ground(1) ............................................. .2.0V to +7.0V
Package Power Dissipation Capability (TA = 25°C) ............................... 1.0 W
Lead Soldering Temperature (10 secs) ................................................ 300°C
Output Short Circuit Current(2) ........................................................... 100 mA
Fast Read Access Time: 45/55/70/90 ns
Low Power CMOS Dissipation:
Active: 30 mA max (CMOS/TTL levels)
Standby: 1 mA max (TTL levels)
Standby: 100 mA max (CMOS levels)
High Speed Programming:
10 ms per byte
1 Sec Typ Chip Program
0.5 Seconds Typical Chip-Erase
12.0V ± 5% Programming and Erase Voltage
Commercial,Industrial and Automotive Temperature Ranges
64K x 16 Word Organization
Stop Timer for Program/Erase
On-Chip Address and Data Latches
JEDEC Standard Pinouts:
40-pin DIP
44-pin PLCC
40-pin TSOP
100,000 Program/Erase Cycles
10 Year Data Retention
Electronic Signature