BYG85B, BYG85B/T3, BYG90-20 Selling Leads, Datasheet
MFG:Philips Package Cooled:SOD106 D/C:09+
BYG85B, BYG85B/T3, BYG90-20 Datasheet download
Part Number: BYG85B
MFG: Philips
Package Cooled: SOD106
D/C: 09+
MFG:Philips Package Cooled:SOD106 D/C:09+
BYG85B, BYG85B/T3, BYG90-20 Datasheet download
MFG: Philips
Package Cooled: SOD106
D/C: 09+
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Datasheet: BYG85B
File Size: 68366 KB
Manufacturer: PHILIPS [Philips Semiconductors]
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PDF/DataSheet Download
Datasheet: BYG10
File Size: 61353 KB
Manufacturer: VISAY [Vishay Siliconix]
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PDF/DataSheet Download
Datasheet: BYG90-20
File Size: 37269 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VRSM | non-repetitive peak reverse voltage | - | 100 | V | |
VR | continuous reverse voltage | - | 100 | V | |
IF(AV) | average forward current | Ttp = 100 °C; averaged over any 20 ms period; see Figs 2 and 7 |
- | 2.5 | A |
IF(AV) | average forward current | Tamb = 60 °C; AL2O3 PCB mounting (see Fig.11); averaged over any 20 ms period; see Fig.3 |
- | 1.3 | A |
IF(AV) | average forward current | Tamb = 60 °C; epoxy PCB mounting (see Fig.11); averaged over any 20 ms period; see Fig.3 |
- | 0.98 | A |
IFRM | repetitive peak forward current | Ttp = 100 °C; see Fig.3 | - | 23 | A |
IFRM | repetitive peak forward current | Tamb = 60 °C; AL2O3 PCB mounting; see Fig.5 |
- | 12 | A |
IFRM | repetitive peak forward current | Tamb = 60 °C; epoxy PCB mounting; see Fig.6 |
- | 8.5 | A |
IFSM | non-repetitive peak forward current | t = 10 ms half sine wave; Tj = Tj max prior to surge; VR = VRRMmax |
- | 35 | A |
Tstg | storage temperature | -65 | +175 | °C | |
Tj | junction temperature | -65 | +150 | °C |
SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
VR | continuous reverse voltage | 20 | V | ||
VRRM | repetitive peak reverse voltage |
|
|
20 |
V |
VRWM | crest working reverse voltage | 20 | V | ||
IF(AV) | average forward current | Tamb =65 °C; see Fig.2; Rth j-a = 80 K/W; note 1; VR(equiv) = 0.2 V; note 2 |
1 | A | |
IRSM | non-repetitive peak forward current | t = 8.3 s half sine wave; JEDEC method |
30 | A | |
IRSM | non-repetitive peak reverse current |
tp = 100 s |
|
0.5 |
A |
Tstg | storage temperature | -65 | 125 | ||
Tj | junction temperature |
|
|
125 |