BUK9MMM-55PNN, BUK9MRR-55PGG, BUK9Y30-75B Selling Leads, Datasheet
MFG:NXP Package Cooled:SOP D/C:0718+
BUK9MMM-55PNN, BUK9MRR-55PGG, BUK9Y30-75B Datasheet download
Part Number: BUK9MMM-55PNN
MFG: NXP
Package Cooled: SOP
D/C: 0718+
BUK9MMM-55PNN, BUK9MRR-55PGG, BUK9Y30-75B
- Table of contents:
Info of BUK9MMM-55PNN
Info of BUK9MRR-55PGG
Info of BUK9Y30-75B
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About BUK 456-800A
PDF/DataSheet Download
Datasheet: BUK 456-800A
File Size: 63635 KB
Manufacturer:
Download : Click here to Download
About BUK 456-800A
PDF/DataSheet Download
Datasheet: BUK 456-800A
File Size: 63635 KB
Manufacturer:
Download : Click here to Download
About BUK9Y30-75B
PDF/DataSheet Download
Datasheet: BUK9Y30-75B
File Size: 105864 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
BUK9Y30-75B General Description
N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology.
BUK9Y30-75B Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | - | 75 | V | |
| VDGR | drain-gate voltage (DC) | RGS = 20 k | - | 75 | V |
| VGS | gate-source voltage (DC) | - | ±15 | V | |
| ID | drain current (DC) | Tmb = 25 ; VGS = 5V; Figure 2 and 3 |
- |
30 |
A |
| Tmb = 100 ; VGS = 5 V; Figure 2 | - | 21 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 120 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 75 | W |
| Tstg | storage temperature | -55 | +175 | ||
| Tj | operating junction temperature | -55 | +175 | ||
| Source-drain diode | |||||
| IDR | reverse drain current (DC) | Tmb= 25 |
- |
|
A |
| IDRM | peak reverse drain current | Tmb= 25 ; pulsed; tp 10 s | - | 120 | A |
| Avalanche ruggedness | |||||
| EDS(AL)S | non-repetitive avalanche energy | unclamped inductive load; ID =30A; VDS 75V; VGS = 5 V; RGS = 50 ; starting Tmb= 25 |
- | 89 | mJ |
| EDS(AL)R | repetitive drain-source avalanche energy |
- | [1] | - | |
[1] Max value not quoted. Repetitive rating defined in Figure 16.
Single-shot avalanche rating limited by Tj(max) of 175 .
Repetitive avalanche rating limited by Tj(avg) of 170 .
Refer to http://www.semiconductors.philips.com/acrobat/applicationnotes/AN10273_1.pdf for further information.
BUK9Y30-75B Features
` Very low on-state resistance
`Q101 compliant
`175 rated
` Logic level compatible.
`Q101 compliant
`175 rated
` Logic level compatible.
BUK9Y30-75B Typical Application
· Automotive systems
· 12 V, 24 V, and 42 V loads
· Motors, lamps and solenoids
· General purpose power switching.
· 12 V, 24 V, and 42 V loads
· Motors, lamps and solenoids
· General purpose power switching.
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