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BUK9608-55A, BUK9608-55A.118, BUK9608-55B

BUK9608-55A, BUK9608-55A.118, BUK9608-55B Selling Leads, Datasheet

MFG:PHILIPS  Package Cooled:2007+  D/C:12000

BUK9608-55A, BUK9608-55A.118, BUK9608-55B Picture

BUK9608-55A, BUK9608-55A.118, BUK9608-55B Datasheet download

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Part Number: BUK9608-55A

 

MFG: PHILIPS

Package Cooled: 2007+

D/C: 12000

 

 

 
 
 
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  • BUK100-50GL

  • Vendor: PHILIPS Qty: 765 Note: 0  Adddate: 2024-11-24
  • Inquire Now
  •   China
    Contact: Mr.cai   MSN:syfdz13@hotmail.com
    Tel: 86-755-82529667
    Fax: 86-755-61685117
    (17)

About BUK9608-55A

PDF/DataSheet Download

Datasheet: BUK9608-55A

File Size: 336351 KB

Manufacturer: Philips

Download : Click here to Download

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BUK9608-55A.118 Suppliers

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  • BUK100-50GL

  • Vendor: PHILIPS Qty: 765 Note: 0  Adddate: 2024-11-24
  • Inquire Now
  •   China
    Contact: Mr.cai   MSN:syfdz13@hotmail.com
    Tel: 86-755-82529667
    Fax: 86-755-61685117
    (17)

About BUK 456-800A

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Datasheet: BUK 456-800A

File Size: 63635 KB

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BUK9608-55B Suppliers

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  • BUK100-50GL

  • Vendor: PHILIPS Qty: 765 Note: 0  Adddate: 2024-11-24
  • Inquire Now
  •   China
    Contact: Mr.cai   MSN:syfdz13@hotmail.com
    Tel: 86-755-82529667
    Fax: 86-755-61685117
    (17)

About BUK 456-800A

PDF/DataSheet Download

Datasheet: BUK 456-800A

File Size: 63635 KB

Manufacturer:

Download : Click here to Download

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Related Part Number

BUK9608-55A General Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Product availability:
BUK9508-55A in SOT78 (TO-220AB)
BUK9608-55A in SOT404 (D2-PAK).

BUK9608-55A Maximum Ratings

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS

drain-source voltage (DC)

-
55
V
VDGR
drain-gate voltage (DC) RGS = 20 k
-
55
V
VGS
gate-source voltage (DC)  
-
±15
V
ID
drain current (DC) Tmb = 25; VGS = 5 V;
Figure 2 and 3
(1)-
125
A
(2)-
75
A
Tmb = 100; VGS = 5 V; Figure 2
(2)-
75
A
IDM
peak drain current Tmb = 25; pulsed; tp 10 s;
Figure 3
-
503
A
Ptot
total power dissipation Tmb = 2; Figure 1
-
253
W
Tstg
Storage temperature  
-55
+175
Tj
junction temperature  
-55
+175
Source-drain diode
IDR
reverse drain current (DC) Tmb = 25
(1)-
125
A
(2)-
75
A
IDRM
peak reverse drain current Tmb = 25; pulsed; tp 10 s
-
503
A
Avalanche ruggedness
EDS(AL)S
non-repetitive drain-source avalanche
energy
unclamped inductive load; ID =75 A;
VDS 55V; VGS = 5 V; RGS = 50;
starting Tmb= 25
-
670
mJ

[1] Current is limited by power dissipation chip rating
[2] Continuous current is limited by package.

BUK9608-55A Features

`TrenchMOS™ technology
`Q101 compliant
` 175 rated
` Logic level compatible.

BUK9608-55A Typical Application

· Automotive and general purpose power switching:
   · 12 V and 24 V loads
   · Motors, lamps and solenoids.

BUK9608-55A Connection Diagram

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