BUK7615-100A 118, BUK7616-55, BUK7616-55A Selling Leads, Datasheet
MFG:NXP Package Cooled:TO-263 D/C:04+
BUK7615-100A 118, BUK7616-55, BUK7616-55A Datasheet download
Part Number: BUK7615-100A 118
MFG: NXP
Package Cooled: TO-263
D/C: 04+
MFG:NXP Package Cooled:TO-263 D/C:04+
BUK7615-100A 118, BUK7616-55, BUK7616-55A Datasheet download
MFG: NXP
Package Cooled: TO-263
D/C: 04+
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PDF/DataSheet Download
Datasheet: BUK 456-800A
File Size: 63635 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUK 456-800A
File Size: 63635 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUK 456-800A
File Size: 63635 KB
Manufacturer:
Download : Click here to Download
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability: BUK7516-55A in SOT78 (TO-220AB) BUK7616-55A in SOT404 (D 2-PAK).
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | - | 55 | V | |
VDGR | drain-gate voltage (DC) | RGS = 20 k | - | 55 | V |
VGS | gate-source voltage (DC) | - | ±20 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10V; Figure 2 and 3 |
- | 65.7 |
A |
Tmb = 100 ; VGS = 10 V; Figure 2 | 46.5 | A | |||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 263 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 138 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | operating junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IDR | reverse drain current (DC) | Tmb= 25 |
- |
65.7 |
A |
IDRM | pulsed reverse drain current | Tmb= 25 ; pulsed; tp 10 s | - | 263 | A |
Avalanche ruggedness | |||||
WDSS | non-repetitive avalanche energy | unclamped inductive load; ID = 49A; VDS 55 V; VGS = 10 V; RGS = 50 ; starting Tj = 25 |
- | 120 | mJ |