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BUK7615-100A 118, BUK7616-55, BUK7616-55A

BUK7615-100A 118, BUK7616-55, BUK7616-55A Selling Leads, Datasheet

MFG:NXP  Package Cooled:TO-263  D/C:04+

BUK7615-100A 118, BUK7616-55, BUK7616-55A Picture

BUK7615-100A 118, BUK7616-55, BUK7616-55A Datasheet download

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Part Number: BUK7615-100A 118

 

MFG: NXP

Package Cooled: TO-263

D/C: 04+

 

 

 
 
 
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BUK7615-100A 118 Suppliers

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  • BUK100-50GL

  • Vendor: PHILIPS Qty: 765 Note: 0  Adddate: 2024-11-28
  • Inquire Now
  •   China
    Contact: Mr.cai   MSN:syfdz13@hotmail.com
    Tel: 86-755-82529667
    Fax: 86-755-61685117
    (17)

About BUK 456-800A

PDF/DataSheet Download

Datasheet: BUK 456-800A

File Size: 63635 KB

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BUK7616-55 Suppliers

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  • BUK100-50GL

  • Vendor: PHILIPS Qty: 765 Note: 0  Adddate: 2024-11-28
  • Inquire Now
  •   China
    Contact: Mr.cai   MSN:syfdz13@hotmail.com
    Tel: 86-755-82529667
    Fax: 86-755-61685117
    (17)

About BUK 456-800A

PDF/DataSheet Download

Datasheet: BUK 456-800A

File Size: 63635 KB

Manufacturer:

Download : Click here to Download

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BUK7616-55A Suppliers

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  • BUK100-50GL

  • Vendor: PHILIPS Qty: 765 Note: 0  Adddate: 2024-11-28
  • Inquire Now
  •   China
    Contact: Mr.cai   MSN:syfdz13@hotmail.com
    Tel: 86-755-82529667
    Fax: 86-755-61685117
    (17)

About BUK 456-800A

PDF/DataSheet Download

Datasheet: BUK 456-800A

File Size: 63635 KB

Manufacturer:

Download : Click here to Download

Related PDF Download

Related Part Number

BUK7616-55A General Description

N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.

Product availability: BUK7516-55A in SOT78 (TO-220AB) BUK7616-55A in SOT404 (D 2-PAK).

BUK7616-55A Maximum Ratings

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) - 55 V
VDGR drain-gate voltage (DC) RGS = 20 k - 55 V
VGS gate-source voltage (DC) - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 10V;
Figure 2 and 3
- 65.7

A
Tmb = 100 ; VGS = 10 V; Figure 2 46.5 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 263 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 138 W
Tstg storage temperature -55 +175
Tj operating junction temperature -55 +175
Source-drain diode
IDR reverse drain current (DC) Tmb= 25



-

65.7


A
IDRM pulsed reverse drain current Tmb= 25 ; pulsed; tp 10 s - 263 A
Avalanche ruggedness
WDSS non-repetitive avalanche energy unclamped inductive load; ID = 49A;
VDS 55 V; VGS = 10 V;
RGS = 50 ; starting Tj = 25
- 120 mJ

BUK7616-55A Features

` TrenchMOS™ technology
` Q101 compliant
` 175 rated
` Standard level compatible.

BUK7616-55A Typical Application

· Automotive and general purpose power switching:
· 12 V and 24 V loads
· Motors, lamps and solenoids.

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