BUK7540-55, BUK7560-100A, BUK757055 Selling Leads, Datasheet
MFG:PHIL Package Cooled:02+ D/C:05+
BUK7540-55, BUK7560-100A, BUK757055 Datasheet download
Part Number: BUK7540-55
MFG: PHIL
Package Cooled: 02+
D/C: 05+
MFG:PHIL Package Cooled:02+ D/C:05+
BUK7540-55, BUK7560-100A, BUK757055 Datasheet download
MFG: PHIL
Package Cooled: 02+
D/C: 05+
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: BUK 456-800A
File Size: 63635 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUK7560-100A
File Size: 325963 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUK 456-800A
File Size: 63635 KB
Manufacturer:
Download : Click here to Download
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOS™ technology, featuring very low on-state resistance.
Product availability: BUK7560-100A in SOT78 (TO-220AB) BUK7660-100A in SOT404 (D2-PAK).
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage (DC) | - | 100 | V | |
VDGR | drain-gate voltage (DC) | RGS = 20 k | - | 100 | V |
VGS | gate-source voltage (DC) | - | ±20 | V | |
ID | drain current (DC) | Tmb = 25 ; VGS = 10V; Figure 2 and 3 |
- |
26 |
A |
Tmb = 100 ; VGS = 10 V; Figure 2 | - | 19 | A | ||
IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 106 | A |
Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 106 | W |
Tstg | storage temperature | -55 | +175 | ||
Tj | operating junction temperature | -55 | +175 | ||
Source-drain diode | |||||
IDR | reverse drain current (DC) | Tmb= 25 [1] |
- |
26 |
A |
IDRM | peak reverse drain current | Tmb= 25 ; pulsed; tp 10 s | - | 106 | A |
Avalanche ruggedness | |||||
WDSS | non-repetitive avalanche energy | unclamped inductive load; ID =75A; VDS 55V; VGS = 10 V; RGS = 50 ; starting Tj = 25 |
- | 110 | mJ |