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N-channel enhancement mode field-effect power transistor in a plastic envelope.
The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in automotive and general purpose switching applications.
BUK456-60A Maximum Ratings
SYMBOL
PARAMETER
CONDITIONS
MIN.
MIN.
MIN.
VDS VDGR ±VGS ID ID IDM Ptot Tstg Tj
Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction Temperature
- RGS=20k - Ths = 25 °C Ths = 100 °C Ths = 25 °C Ths = 25 °C - -