BUK139-50L, BUK150-50DL, BUK1M200-50SDLD Selling Leads, Datasheet
MFG:NXP Package Cooled:2009+ROHS D/C:7200
BUK139-50L, BUK150-50DL, BUK1M200-50SDLD Datasheet download
Part Number: BUK139-50L
MFG: NXP
Package Cooled: 2009+ROHS
D/C: 7200
MFG:NXP Package Cooled:2009+ROHS D/C:7200
BUK139-50L, BUK150-50DL, BUK1M200-50SDLD Datasheet download
MFG: NXP
Package Cooled: 2009+ROHS
D/C: 7200
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PDF/DataSheet Download
Datasheet: BUK 456-800A
File Size: 63635 KB
Manufacturer:
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUK150-50DL
File Size: 42951 KB
Manufacturer: Philips
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BUK1M200-50SDLD
File Size: 310114 KB
Manufacturer: PHILIPS [Philips Semiconductors]
Download : Click here to Download
Monolithic temperature and overload protected logic level power MOSFET in TOPFET2 technology assembled in a 3 pin plastic package.
SYMBOL |
PARAMETER |
CONDITIONS |
MIN. |
MAX. |
UNIT |
VDS |
Continuous drain source voltage |
- |
- |
50 |
V |
ID |
Continuous drain current |
VIS = 5 V; Tmb = 25 °C |
- |
self -limited |
A |
ID |
Continuous drain current |
VIS = 5 V; Tmb 110 °C |
- |
20 |
A |
II |
Continuous input current |
- |
-5 |
5 |
mA |
IIRM |
Non-repetitive peak input current |
tp 1 ms |
-50 |
50 |
mA |
PD |
Total power dissipation |
Tmb 25 °C |
- |
90 |
W |
Tstg |
Storage temperature |
- |
-55 |
175 |
°C |
Tj |
Continuous junction temperature |
normal operation |
- |
150 |
°C |
Tsold |
Case temperature |
during soldering |
- |
260 |
°C |
Symbol | Parameter | Conditions | Min | Max | Unit |
VDS | drain-source voltage[1] |
- | 50 | V | |
II | input current | clamping | - | 3 | mA |
Ptot | tatal power dissipation[2] |
Tsp25; Figure 4 | - | 9.4 | W |
IIMS | non-repetitive peak input current | tp1 ms | - | 10 | mA |
Tstg | storage temperature | -55 | +150 | ||
Tj | junction temperature[3] |
normal operation | - | 150 | |
Overvoltage clamping[4] | |||||
EDS(CL)S | non-repetitive drain-source clamping energy[5] | Tamb=25; IDMID(lim) (refer to Table 5); inductive load | - | 100 | mJ |
EDS(CL)R | repetitive drain-source clamping[5] |
Tsp125;IDM=50mA;f=250Hz | - | 5 | mJ |
Overload protection[6] | |||||
VDS(prot) | protected drain-source voltage | VIS4V | - | 35 | V |
Reverse diode | |||||
IS | source(diode forward) current | Tsp25;VIS=0V | - | 2 | A |
Electrostatic discharge | |||||
Vesd | electrostatic discharge voltage | C=250 pF; R=1.5k | - | 2 | kV |
Power TrenchMOS
Overtemperature protection
Overload protection
Input-source voltage resets latched protection circuitry.
Inputusedtocontroloutputstageand supply overload protection circuits
5 V logic compatible input level
Current limiting
ESD protection for all pins
Overfatigue clamping for turn off of inductive loads
Low operating input current permits direct drive by micro-controller.