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BT258S-800R, BT258U-600R, BT258X-500R

Table of contents:
Info of BT258S-800R
Info of BT258U-600R
Info of BT258X-500R

BT258S-800R, BT258U-600R, BT258X-500R Selling Leads, Datasheet

MFG:NXP Package Cooled:SOT428 D/C:2010+

BT258S-800R, BT258U-600R, BT258X-500R Picture

BT258S-800R, BT258U-600R, BT258X-500R Datasheet download

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Part Number: BT258S-800R

MFG: NXP

Package Cooled: SOT428

D/C: 2010+

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BT258S-800R General Description

Passivated,sensitivegatethyristorin a plastic envelope, suitable for surfacemounting,intendedforusein general purpose switching and phase control applications. These devicesareintendedtobeinterfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

BT258S-800R Maximum Ratings

SYMBOL	PARAMETER	CONDITIONS	MIN.	MAX.	UNIT
V_DRM,V_RRMI_T(AV) I_T(RMS) I_TSM I²t dI_T/dt I_GM V_GM P_GM P_G(AV) T_stg T_j	Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current I²t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature	full sine wave; T_mb 111 °C full sine wave; T_j = 25 °C prior to surge t = 10 ms t = 8.3 ms t = 10 ms I_TM = 10 A; I_G = 50 A; dI_G/dt = 50 A/ms T2+ G+ T2+ G- T2- G- T2- G+ over any 20 ms period	- - - - - - - - - - - - - -40 -	800 5 8 75 82 28 50 2 5 5 0.5 150 125¹	V A A A A²s A/s A V W W

BT258S-800R Connection Diagram

BT258X-500R General Description

The BT258X-500R is designed as passivated, sensitive gate thyristors in a full pack, plastic envelope, intended for use in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.

Some limiting values have been concluded into several points as follow. The first one is about its repetitive peak off-state voltage which would be 500V. The second one is about its average on-state current which would be 5A. The third one is about its RMS on-state current which would be 8A. The fourth one is about its non-repetitive peak on-state current which would be 75A at t=10ms and would be 82A at t=8.3ms. The fifth one is about its I2t for fusing at t=10ms which would be max 28 A2s. The sixth one is about its repetitive rate of rise of on-state current after triggering which would be 50 A/s. The seventh one is about its peak gate current which would be max 2A. The eighth one is about its peak gate voltage which would be max 5V. The ninth one is about its peak reverse gate voltage which would be max 5V. The tenth one is about its peak gate power which would be max 5W. The eleventh one is about its average gate power which would be 0.5W over any 20ms period. The twelfth one is about its storage temperature which would be from -40 to 150°C. The thirteenth one is about its operating junction temperature which would be max 125°C.

Also some static characteristics about it. The first one is about its holding current which would be typ 0.3mA and max 6mA. The second one is about its on-state voltage which would be typ 1.3V and max 1.6V. The third one is about its gate trigger voltage which would be typ 0.4V and max 1.5V with condition of Vd=12V and It=0.1A and would be min 0.1V and typ 0.2V with condition of Vd=Vrrm and It=0.1A and Tj=110°C. The fourth one is about its off-state leakage current which would be typ 0.1mA and max 0.5mA. And so on. For more information please contact us.

BT258X-500R Maximum Ratings

BT258X-500R Features

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