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BQ4016YMC-70N, BQ4017, BQ4017MC-70

Table of contents:
Info of BQ4016YMC-70N
Info of BQ4017
Info of BQ4017MC-70

BQ4016YMC-70N, BQ4017, BQ4017MC-70 Selling Leads, Datasheet

MFG:Texas Instruments Category:Integrated Circuits (ICs) Package Cooled:DIP D/C:09+

BQ4016YMC-70N, BQ4017, BQ4017MC-70 Datasheet download

Five Points

Part Number: BQ4017MC-70

Category: Integrated Circuits (ICs)

MFG: Texas Instruments

Package Cooled: DIP

D/C: 09+

Description: IC NVSRAM 2048KX8 36-DIP

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BQ4017 Parameters

BQ4017 Features

Data retention in the absence of power
Automatic write-protection during power-up/power-down cycles
Conventional SRAM operation; unlimited write cycles
5-year minimum data retention in absence of power
Battery internally isolated until power is applied

BQ4017 General Description

The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility coupled with the unlimited write cycles of standard SRAM.

The control circuitry constantly monitors the single 5V supply for an out-of-tolerance condition. When V_CCfalls out of tolerance, the SRAM is unconditionally write-protected to prevent an inadvertent write operation.

At this time the integral energy source is switched on to sustain the memoryuntilafterV_CC returnsvalid.

The bq4017 uses extremely low standby current CMOS SRAMs, coupled with small lithium coin cells to provide nonvolatility without long write-cycle times and the write-cycle limitations associated with EE-PROM.

The bq4017 has the same interface as industry-standard SRAMs and requiresnoexternalcircuitry.

BQ4017 Maximum Ratings

Symbol	Parameter	Value	Unit	Conditions
V_CC	DC voltage applied on V_CC relative to V_SS	-0.3 to 7.0	V
V_T	DC voltage applied on any pin excluding V_CC relative to V_SS	-0.3 to 7.0	V	V_T V_CC + 0.3
T_OPR	Operatingtemperature	0 to +70	°C
T_STG	Storage temperature	-40 to +70	°C
T_BIAS	Temperature under bias	-10 to +70	°C
T_SOLDER	Soldering temperature	+260	°C	For 10 seconds

BQ4017 Features

Data retention in the absence of power
Automatic write-protection during power-up/power-down cycles
Conventional SRAM operation; unlimited write cycles
5-year minimum data retention in absence of power
Battery internally isolated until power is applied

BQ4017 Typical Application

BQ4017 Datasheet

BQ4017 Connection Diagram

BQ4017MC-70 Parameters

Technical/Catalog Information	BQ4017MC-70
Vendor	Texas Instruments
Category	Integrated Circuits (ICs)
Memory Type	NVSRAM (Non-Volatile SRAM)
Memory Size	16M (2M x 8)
Speed	70ns
Interface	Parallel
Package / Case	36-DIP Module
Packaging	Tube
Voltage - Supply	4.75 V ~ 5.5 V
Operating Temperature	0°C ~ 70°C
Format - Memory	RAM
Drawing Number	296; 4201977; MC; 36
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	BQ4017MC 70 BQ4017MC70 296 9404 5 ND 29694045ND 296-9404-5

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