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BQ4011YMA-200, BQ4011YMA-85, BQ4013

Table of contents:
Info of BQ4011YMA-200
Info of BQ4011YMA-85
Info of BQ4013

BQ4011YMA-200, BQ4011YMA-85, BQ4013 Selling Leads, Datasheet

MFG:Texas Instruments Category:Integrated Circuits (ICs) Package Cooled:08+ D/C:DIP

BQ4011YMA-200, BQ4011YMA-85, BQ4013 Datasheet download

Five Points

Part Number: BQ4011YMA-200

Category: Integrated Circuits (ICs)

MFG: Texas Instruments

Package Cooled: 08+

D/C: DIP

Description: IC NONVOLATILE SRAM 32KX8 28-DIP

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BQ4011YMA-200 Parameters

Technical/Catalog Information	BQ4011YMA-200
Vendor	Texas Instruments
Category	Integrated Circuits (ICs)
Memory Type	NVSRAM (Non-Volatile SRAM)
Memory Size	256K (32K x 8)
Speed	200ns
Interface	Parallel
Package / Case	28-DIP Module (600 mil)
Packaging	Tube
Voltage - Supply	4.5 V ~ 5.5 V
Operating Temperature	0°C ~ 70°C
Format - Memory	RAM
Drawing Number	296; 4201975; MA; 28, 32
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BQ4011YMA 200 BQ4011YMA200

BQ4011YMA-200 General Description

128Kx8 Nonvolatile SRAM, 5% Voltage Tolerance

BQ4011YMA-200 Features

Data retention for at least 10 years without power
Automatic write-protection during power-up/power-down cycles
Conventional SRAM operation, including unlimited write cycles
Internal isolation of battery before power application
Industry standard 32-pin DIP pinout
34-pin LIFETIME LITHIUM^TM module
- Module completely surface-mounted
- Snap-on power-source for lithium battery backup
- Replaceable power-source (part number: bq40MS)

BQ4011YMA-200 Typical Application

BQ4013 Datasheet

BQ4013 Parameters

BQ4013 Features

Data retention for at least 10 years without power
Automatic write-protection during power-up/power-down cycles
Conventional SRAM operation, including unlimited write cycles
Internal isolation of battery before power application
Industry standard 32-pin DIP pinout
34-pin LIFETIME LITHIUM^TM module
- Module completely surface-mounted
- Snap-on power-source for lithium battery backup
- Replaceable power-source (part number: bq40MS)

BQ4013 General Description

128Kx8 Nonvolatile SRAM, 5% Voltage Tolerance

BQ4013 Maximum Ratings

Symbol	Parameter	Value	Unit	Conditions
V_CC	DC voltage applied on V_CC relative to V_SS	-0.3 to 7.0	V
V_T	DC voltage applied on any pin excluding V_CC relative to V_SS	-0.3 to 7.0	V	V_T V_CC + 0.3
T_OPR	Operatingtemperature	0 to +70	°C	Commercial
T_OPR	Operatingtemperature	-40 to +85		Extended "N"
T_STG	Storage temperature	-40 to +70	°C	Commercial
T_STG	Storage temperature	-40 to +85	°C	Extended "N"
T_BIAS	Temperature under bias	-10 to +70	°C	Commercial
T_BIAS	Temperature under bias	-40 to +85	°C	Extended "N"
T_SOLDER	Soldering temperature	260	°C	For 10 seconds

BQ4013 Features

Data retention for at least 10 years without power
Automatic write-protection during power-up/power-down cycles
Conventional SRAM operation, including unlimited write cycles
Internal isolation of battery before power application
Industry standard 32-pin DIP pinout
34-pin LIFETIME LITHIUM^TM module
- Module completely surface-mounted
- Snap-on power-source for lithium battery backup
- Replaceable power-source (part number: bq40MS)

BQ4013 Typical Application

BQ4013 Datasheet

BQ4013 Connection Diagram

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