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BF2040RE6814420, BF2040W E6327, BF2040W E6814

Table of contents:
Info of BF2040RE6814420
Info of BF2040W E6327
Info of BF2040W E6814

BF2040RE6814420, BF2040W E6327, BF2040W E6814 Selling Leads, Datasheet

MFG:INFINEON Package Cooled:Sot-343 D/C:09+

BF2040RE6814420, BF2040W E6327, BF2040W E6814 Picture

BF2040RE6814420, BF2040W E6327, BF2040W E6814 Datasheet download

Five Points

Part Number: BF2040RE6814420

MFG: INFINEON

Package Cooled: Sot-343

D/C: 09+

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BF2040W E6814 General Description

The BF2040W E6814 is a kind of silicon N-channel MOSFET tetrode which has two unique features:(1) for low noise,high gain controlled input stages upp to 1 GHz.(2)operating voltage is 5 V.

There are some maximum ratings about it.(1)drain-source voltage(VDS) is 14 V.(2)continuous drain current(ID) is 40 mA.(3)gate 1/ gate 2-source current(±IG1/2SM) is 10 mA.(4)total power dissipation(TS is 94°C,Ptot) is 200 mW.(5)storage temperature(Tstg) is -55°C to 150°C.(7)channel temperature(Tch) is 150°C.

Otherwise,there are some DC characteristics at Ta is 25°C,unless otherwise specified.(1)drain-source breakdown voltage(V(BR)DS) is 12 V min when ID is 650 A, -VG1S is 4 V,-VG2S is 4V.(2)gate1-source breakdown voltage(+V(BR)G1SS) is 8.5 V typ when +/G1S is 10 V ,VG2S is 0 V,and VDS is 0 V.(3)gate2-source breakdown voltage(+V(BR)G2SS) is 8.5 V typ when ±/G2S is 10 mA, VG1S is equal to VDS which is 0 V.(4)gate1-source leakage current(+/G1SS) is 50 nA max when VG1S is 5 V, VG2S is 0.(5)gate2-source leakage current(+/G2SS) is 50 nA max when VG2S is 5 V, VG1S is 0, VDS is 0.(6)drain-source current(IDSX) is 15 mA typ when VDS is 5 V, VG2S is 4 V, RG1 is 40 k.(7)gate2-source pinch-off voltage(VG2S(p)) is 0.3 V min and 0.6 V typ when VDS is 5 V and ID is 20 A.

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