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BDX53BFP, BDX53C, BDX53CTU

Table of contents:
Info of BDX53BFP
Info of BDX53C
Info of BDX53CTU

BDX53BFP, BDX53C, BDX53CTU Selling Leads, Datasheet

MFG:Fairchild Semiconductor Category:Discrete Semiconductor Products Package Cooled:TO-220 D/C:05+

BDX53BFP, BDX53C, BDX53CTU Datasheet download

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Part Number: BDX53C

Category: Discrete Semiconductor Products

MFG: Fairchild Semiconductor

Package Cooled: TO-220

D/C: 05+

Description: TRANSISTOR NPN 100V 8A TO-220

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BDX53BFP General Description

The BDX53BFP is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration and are mounted in T0-220FP fully molded isolated package. It is intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications.

BDX53BFP Maximum Ratings

Symbol	Parameter	Value	Unit
V_CBO	Collector-Base Voltage (I_E= 0))	80	V
V_CEO	emitter-base voltage(I_B = 0)	80	V
V_EBO	Emitter-Base Voltage (I_C = 0)	5	V
I_C	Collector and Emit ter Current	8	A
I_CM	Collector Peak Current (repetitive)	12	A
I_B	Base Current	0.2	A
P_tot	Total Dissipation at T_C = 25 °C	29	W
T_stg	Storage Temperature	-65 to 150	°C
T_j	Max. Operating Junction Temperature	150	°C

BDX53BFP Typical Application

·GENERAL PURPOSE SWITCHING AND AMPLIFIER
· LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT
· FULLY MOLDED ISOLATED PACKAGE
· 2000 V DC ISOLATION(U.L. COMPLIANT)

BDX53C Parameters

Technical/Catalog Information	BDX53C
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	8A
Power - Max	60W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 3A, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 12mA, 3A
Frequency - Transition	-
Current - Collector Cutoff (Max)	500A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BDX53C BDX53C STBDX53C ND STBDX53CND STBDX53C

BDX53CTU Parameters

Technical/Catalog Information	BDX53CTU
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	100V
Current - Collector (Ic) (Max)	8A
Power - Max	60W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 3A, 3V
Vce Saturation (Max) @ Ib, Ic	2V @ 12mA, 3A
Frequency - Transition	-
Current - Collector Cutoff (Max)	500A
Mounting Type	Through Hole
Package / Case	TO-220-3 (Straight Leads)
Packaging	Tube
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BDX53CTU BDX53CTU

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