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The BDW83C is a silicon epitaxial-base NPN power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. It is intended for use in power linear and switching applications.The complementary type is BDW84C.
BDW84C Maximum Ratings
Symbol
Parameter
Value
Unit
NPN
BDW83C
PNP
BDW84C
VCBO
Collector-Base Voltage (IE = 0)
100
V
VCEO
Collector-Emitter Voltage (IB = 0)
100
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC
Collector Current
15
A
ICM
Collector Peak Current
40
A
IB
Base Current
0.5
A
Ptot
Total Dissipation at Tc 25
130
W
Tstg
Storage Temperature
-65 to 150
Tj
Max. Operating Junction Temperature
150
BDW84C Features
*BDW83C IS A SGS-THOMSON PREFERRED SALESTYPE *COMPLEMENTARY PNP - NPN DEVICES *HIGH CURRENT CAPABILITY *FAST SWITCHING SPEED *HIGH DC CURRENT GAIN