MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:09+ D/C:TO-220
BDW64C, BDW64D, BDW83C Datasheet download
Category: Discrete Semiconductor Products
MFG: STMicroelectronics
Package Cooled: 09+
D/C: TO-220
Description: TRANSISTOR NPN 100V 15A TO-247-3
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PDF/DataSheet Download
Datasheet: BDW64C
File Size: 150379 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BDW64D
File Size: 150379 KB
Manufacturer: POINN [Power Innovations Limited]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: BDW83C
File Size: 69509 KB
Manufacturer: STMICROELECTRONICS [STMicroelectronics]
Download : Click here to Download
| RATING | SYMBOL | VALUE | UNIT | |
| Collector-base voltage (IE = 0) |
BDW64 BDW64A BDW64B BDW64C BDW64D |
VCBO | -45 -60 -80 -100 -120 |
V |
| Collector-emitter voltage (IB = 0) |
BDW64 BDW64A BDW64B BDW64C BDW64D |
VCEO | -45 -60 -80 -100 -120 |
V |
| Emitter-base voltage | VEBO | -5 | V | |
| Continuous collector current | IC | -6 | A | |
| Continuous base current | IB | -0.1 | A | |
| Continuous device dissipation at (or below) 25°C case temperature (see Note 2) | Ptot | 60 | W | |
| Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) | Ptot | 2 | W | |
| Unclamped inductive load energy (see Note 4) | 1/2LIC2 | 50 | mJ | |
| Operating junction temperature range | Tj | -65 to +150 | °C | |
| Storage temperature range | Tstg | -65 to +150 | °C | |
| Lead temperature 3.2 mm from case for 10 seconds | TL | -65 to +150 | °C | |
| RATING | SYMBOL | VALUE | UNIT | |
| Collector-base voltage (IE = 0) |
BDW64 BDW64A BDW64B BDW64C BDW64D |
VCBO | -45 -60 -80 -100 -120 |
V |
| Collector-emitter voltage (IB = 0) |
BDW64 BDW64A BDW64B BDW64C BDW64D |
VCEO | -45 -60 -80 -100 -120 |
V |
| Emitter-base voltage | VEBO | -5 | V | |
| Continuous collector current | IC | -6 | A | |
| Continuous base current | IB | -0.1 | A | |
| Continuous device dissipation at (or below) 25°C case temperature (see Note 2) | Ptot | 60 | W | |
| Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) | Ptot | 2 | W | |
| Unclamped inductive load energy (see Note 4) | 1/2LIC2 | 50 | mJ | |
| Operating junction temperature range | Tj | -65 to +150 | °C | |
| Storage temperature range | Tstg | -65 to +150 | °C | |
| Lead temperature 3.2 mm from case for 10 seconds | TL | -65 to +150 | °C | |
| Technical/Catalog Information | BDW83C |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | NPN - Darlington |
| Voltage - Collector Emitter Breakdown (Max) | 100V |
| Current - Collector (Ic) (Max) | 15A |
| Power - Max | 130W |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 6A, 3V |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 150mA, 15A |
| Frequency - Transition | - |
| Current - Collector Cutoff (Max) | 1mA |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | BDW83C BDW83C BDW83C TO218 ND BDW83CTO218ND BDW83C-TO218 |
| Symbol | Parameter | Value | Unit | |
| NPN | BDW83C | |||
| PNP | BDW84C | |||
| VCBO | Collector-Base Voltage (IE = 0) | 100 | V | |
| VCEO | Collector-Emitter Voltage (IB = 0) | 100 | V | |
| VEBO | Emitter-Base Voltage (IC = 0) | 5 | V | |
| IC | Collector Current | 15 | A | |
| ICM | Collector Peak Current | 40 | A | |
| IB | Base Current | 0.5 | A | |
| Ptot | Total Dissipation at Tc 25 | 130 | W | |
| Tstg | Storage Temperature | -65 to 150 | ||
| Tj | Max. Operating Junction Temperature | 150 | ||
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