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BDW54K, BDW55, BDW64B

Table of contents:
Info of BDW54K
Info of BDW55
Info of BDW64B

BDW54K, BDW55, BDW64B Selling Leads, Datasheet

MFG:TEX Package Cooled:Transistor D/C:94

BDW54K, BDW55, BDW64B Datasheet download

Five Points

Part Number: BDW54K

MFG: TEX

Package Cooled: Transistor

D/C: 94

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BDW55 General Description

`CollectorEmitter Sustaining Voltage- : VCEO(SUS)= 45V- BDW55 = 60V- BDW57 = 80V- BDW59
`Complement to Type BDW56/58/60

BDW55 Maximum Ratings

SYMBOL	PARAMETER	RATING	UNIT
V_CBO	Collector to base voltage BDW55 BDW57 BDW59	46 60 100	V
V_CER	Collector-Emitter Voltage RBE= 1kBDW55 BDW57 BDW59	45 60 100	V
V_CEO	Collector to emitter voltageBDW55 BDW57 BDW59	45 60 80	V
V_EBO	Emitter to base voltage	5	V
I_C	Collector Current-Continuous	1	A
I_CM	Collector Current-Peak	1.5	A
P_C	Collector Power Dissipation @ TC=25	8	W
T_j	Junction temperature	175
T_stg	Storage temperaturerange	-65~175

BDW55 Typical Application

·Designed for use in professional equipment such as telecommunication and etc.

BDW64B Maximum Ratings

RATING		SYMBOL	VALUE	UNIT
Collector-base voltage (I_E = 0)	BDW64 BDW64A BDW64B BDW64C BDW64D	V_CBO	-45 -60 -80 -100 -120	V
Collector-emitter voltage (I_B = 0)	BDW64 BDW64A BDW64B BDW64C BDW64D	V_CEO	-45 -60 -80 -100 -120	V
Emitter-base voltage		V_EBO	-5	V
Continuous collector current		I_C	-6	A
Continuous base current		I_B	-0.1	A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2)		P_tot	60	W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3)		P_tot	2	W
Unclamped inductive load energy (see Note 4)		1/2LI_C²	50	mJ
Operating junction temperature range		T_j	-65 to +150	°C
Storage temperature range		T_stg	-65 to +150	°C
Lead temperature 3.2 mm from case for 10 seconds		T_L	-65 to +150	°C

BDW64B Features

*Designed for Complementary Use with BDW63, BDW63A, BDW63B, BDW63C and BDW63D
*60 W at 25°C Case Temperature
*6 A Continuous Collector Current
*Minimum h_FE of 750 at 3 V, 2 A

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