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BD676H, BD677, BD677 PBF

Table of contents:
Info of BD676H
Info of BD677
Info of BD677 PBF

BD676H, BD677, BD677 PBF Selling Leads, Datasheet

MFG:STMicroelectronics Category:Discrete Semiconductor Products Package Cooled:09+ D/C:TO-

BD676H, BD677, BD677 PBF Datasheet download

Five Points

Part Number: BD677

Category: Discrete Semiconductor Products

MFG: STMicroelectronics

Package Cooled: 09+

D/C: TO-

Description: TRANS DARL NPN 60V SOT-32

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BD677 Parameters

Technical/Catalog Information	BD677
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Transistor Type	NPN - Darlington
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	4A
Power - Max	40W
DC Current Gain (hFE) (Min) @ Ic, Vce	750 @ 10.5A, 3V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 30mA, 1.5A
Frequency - Transition	-
Current - Collector Cutoff (Max)	500A
Mounting Type	Through Hole
Package / Case	SOT-32-3, TO-126-3
Packaging	Tube
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	BD677 BD677 497 5714 ND 4975714ND 497-5714

BD677 General Description

The BD677, BD677A, BD679, BD679A and BD681 are silicon epitaxial-base NPN powe transistors in monolithic Darlington configurationmountedin JedecSOT-32plasticpackage.

They are intended for use in medium power linar and switching applications

The complementary PNP types are BD678,BD678A, BD680, BD680A and BD682 respectively.

BD677 Maximum Ratings

Symbol	Parameter	Value			Unit
		BD677/A	BD679/A	BD681
		BD678/A	BD680/A	BD682
V_CBO	Collector-Base Voltage (I_E =0)	60	80	100	V
V_CEO	Collector-Emitter Voltage (I_B =0)	60	80	100	V
V_EBO	Emitter-Base Voltage (I_C =0)	5			V
I_C	Collector Current	4			A
I_CI_B	Collector Peak Current Base Current	6 0.1			A A
P_tot	Total Dissipation at Tc 25	40			W
T_stg	Storage Temperature	-65 to 150
T_j	Max. Operating Junction Temperature	150

BD677 Typical Application

*LINEARANDSWITCHINGINDUSTRIAL
*EQUIPMENT

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