BD649, BD649F, BD650 Selling Leads, Datasheet
MFG:PHILIPS Package Cooled:AEG,SIE,VAL D/C:03+
BD649, BD649F, BD650 Datasheet download
Part Number: BD649
MFG: PHILIPS
Package Cooled: AEG,SIE,VAL
D/C: 03+
BD649, BD649F, BD650
- Table of contents:
Info of BD649
Info of BD649F
Info of BD650
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About BD649
PDF/DataSheet Download
Datasheet: BD649
File Size: 130137 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
About BD6026GU
PDF/DataSheet Download
Datasheet: BD6026GU
File Size: 430537 KB
Manufacturer: ROHM [Rohm]
Download : Click here to Download
About BD650
PDF/DataSheet Download
Datasheet: BD650
File Size: 130137 KB
Manufacturer: SIEMENS [Siemens Semiconductor Group]
Download : Click here to Download
BD649 Maximum Ratings
| RATING | SYMBOL | VALUE | UNIT | |
| Collector-base voltage (IE = 0) |
BD645 BD647 BD649 BD651 |
VCBO | 80 100 120 140 |
V |
| Collector-emitter voltage (IB = 0) |
BD645 BD647 BD649 BD651 |
VCEO | 80 100 120 140 |
V |
| Emitter-base voltage | VEBO | 5 | V | |
| Continuous collector current | IC | 8 | A | |
| Peak collector current (see Note 1) | ICM | 12 | A | |
| Continuous base current | IB | 0.3 | A | |
| Continuous device dissipation at (or below) 25°C case temperature (see Note 2) | Ptot | 62.5 | W | |
| Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) | Ptot | 2 | W | |
| Unclamped inductive load energy (see Note 4) | 1/2LIC2 | 50 | mJ | |
| Operating junction temperature range | Tj | -65 to +150 | °C | |
| Storage temperature range | Tstg | -65 to +150 | °C | |
| Lead temperature 3.2 mm from case for 10 seconds | TL | 260 | °C | |
BD650 General Description
·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min)
·High DC Current Gain : hFE= 750(Min) @IC= -3A
·Low Saturation Voltage
·Complement to Type BD649
·High DC Current Gain : hFE= 750(Min) @IC= -3A
·Low Saturation Voltage
·Complement to Type BD649
BD650 Maximum Ratings
|
SYMBOL |
PARAMETER |
VALUE |
UNIT |
|
VCBO |
Collector-Base Voltage |
-120 |
V |
|
VCEO |
Collector-Emitter Voltage |
-100 |
V |
|
VEBO |
Emitter-Base Voltage |
-5 |
V |
|
IC |
Collector Current-Continuous |
-8 |
A |
|
ICP |
Collector Current-Peak |
-12 |
A |
|
IB |
Base Current-Continuous |
-0.3 |
A |
|
PC |
Collector Power Dissipation @TC=25 |
2 |
W |
|
Collector Power Dissipation |
62.5 | ||
|
Tj |
Junction Temperature |
150 |
|
|
Tstg |
Storage Temperature Range |
-65~150 |
BD650 Typical Application
·Designed for use as complementary AF push-pull output stage applications
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