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The BD533FP is silicon epitaxial-base NPN power transistor in Jedec TO-220FP fully molded isolated package, intented for use in medium power linear and switching applications.
The complementary PNP type is BD534FP.
BD534FP Maximum Ratings
Symbol
Parameter
Value
Unit
NPN
BD533FP
PNP
BD534FP
VCBO
Collector-Base Voltage (IE= 0))
45
V
VCES
Collector-Emitter Voltage (VBE=0)
45
V
VCEO
emitter-base voltage(IB = 0)
45
V
VEBO
Emitter-Base Voltage (IC = 0)
5
V
IC,IE
Collector and Emit ter Current
8
A
IB
Base Current
1
A
Ptot
Total Dissipation at TC 25 °C
25
W
Tj
Storage Temperature
-65 to 150
°C
Tstg
Max. Operating Junction Temperature
150
°C
For PNP types voltage and current values are negative.
BD534FP Features
·BD534FP IS SGS-THOMSON PREFERRED SALESTYPE · FULLY MOLDED ISOLATED PACKAGE · 2000 V DC ISOLATION(U.L. COMPLIANT)
BD535 Parameters
Technical/Catalog Information
BD535
Vendor
STMicroelectronics
Category
Discrete Semiconductor Products
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
60V
Current - Collector (Ic) (Max)
8A
Power - Max
50W
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Frequency - Transition
-
Current - Collector Cutoff (Max)
100nA
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Packaging
Tube
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
BD535 BD535 497 8437 5 ND 49784375ND 497-8437-5
BD535 Maximum Ratings
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage : BD533 : BD535 : BD537
45 60 80
V
V
V
VCES
Collector-Emitter Voltage: BD533 : BD535 : BD537
45 60 80
V V V
VCEO
Collector-Emitter Voltage: BD533 : BD535 : BD537
45 60 80
V
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
8
A
IB
Base Current
1
A
PC
Collector Dissipation (TC =25)
50
W
TJ
Junction Temperature
150
TSTG
Storage Temperature
- 65 ~ 150
BD535 Typical Application
* Low Saturation Voltage * Complement to BD534, BD536 and BD538 respectively