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?CMOS processes are utilized to develop high precision, low current consumption CMOS reset ICs that allow arbitrary setting of the delay time. The extensive lineup includes both Nch Open Drain and CMOS output types in a wide range of detection voltages (from 2.3V to 6.0V, in 0.1V steps), enabling selection of the ideal solution based on customer requirements. In addition, the entire series is of course both lead-free and RoHS-compliant.
BD5329G Maximum Ratings
Voltage detection precision (%)
±1%
Voltage detection (V)
2.9
Operating temperature range (ºC)
-40 to 105
Detection step (V)
0.1
Output type
CMOS
"H"Counter timer delay time setting (ms)
Changeability
Circuit current (µA)
ON
0.8
OFF
0.75
Hysteresis voltage (V)
VDET x 0.05
"L"Output current (mA)
VDD=1.2V
1.2
VDD=2.4V
5.0
BD5329G Connection Diagram
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BD533 Parameters
Technical/Catalog Information
BD533
Vendor
STMicroelectronics
Category
Discrete Semiconductor Products
Transistor Type
NPN
Voltage - Collector Emitter Breakdown (Max)
45V
Current - Collector (Ic) (Max)
8A
Power - Max
50W
DC Current Gain (hFE) (Min) @ Ic, Vce
20 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic
800mV @ 200mA, 2A
Frequency - Transition
-
Current - Collector Cutoff (Max)
100A
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Packaging
Tube
Drawing Number
*
Lead Free Status
Lead Free
RoHS Status
RoHS Compliant
Other Names
BD533 BD533 497 5203 5 ND 49752035ND 497-5203-5
BD533 Maximum Ratings
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage : BD533 : BD535 : BD537
45 60 80
V
V
V
VCES
Collector-Emitter Voltage: BD533 : BD535 : BD537
45 60 80
V V V
VCEO
Collector-Emitter Voltage: BD533 : BD535 : BD537
45 60 80
V
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
8
A
IB
Base Current
1
A
PC
Collector Dissipation (TC =25)
50
W
TJ
Junction Temperature
150
TSTG
Storage Temperature
- 65 ~ 150
BD533 Typical Application
* Low Saturation Voltage * Complement to BD534, BD536 and BD538 respectively