BA159A-01, BA159D, BA159DGP Selling Leads, Datasheet
MFG:DIODES Package Cooled:0343 D/C:2,900
BA159A-01, BA159D, BA159DGP Datasheet download
Part Number: BA159A-01
MFG: DIODES
Package Cooled: 0343
D/C: 2,900
MFG:DIODES Package Cooled:0343 D/C:2,900
BA159A-01, BA159D, BA159DGP Datasheet download
MFG: DIODES
Package Cooled: 0343
D/C: 2,900
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Datasheet: BA102
File Size: 42521 KB
Manufacturer:
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PDF/DataSheet Download
Datasheet: BA159D
File Size: 44380 KB
Manufacturer: GE [General Semiconductor]
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PDF/DataSheet Download
Datasheet: BA102
File Size: 42521 KB
Manufacturer:
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SYMBOLS | BA157 | BA158 | BA159D | UNITS | |
Maximum repetitive peak reverse voltage | VRRM | 400 | 600 | 800 | Volts |
Maximum RMS voltage | VRMS | 280 | 420 | 560 | Volts |
Maximum DC blocking voltage | VDC | 400 | 600 | 800 | Volts |
Maximum average forward rectified current 0.375" (9.5mm) lead length at TA=55°C |
I(AV) | 1.0 | Amp | ||
Peak forward surge current 10ms single half sine-wave superimposed on rated load at TA=25°C |
IFSM | 20.0 | Amps | ||
Maximum instantaneous forward voltage at 1.0A | VF | 1.3 | Volts | ||
Maximum DC reverse current at rated DC blocking voltage TA=25°C |
IR | 5.0 | mA | ||
Maximum reverse recovery time (NOTES 1) | trr | 300 | ns | ||
Typical junction capacitance (NOTE 2) | CJ | 12.0 | pF | ||
Maximum operation junction temperature | TJ | -65 to +125 | °C | ||
Maximum storage temperature | TSTG | -65 to +150 | °C | ||
NOTES: (1) Reverse recovery test conditions: IF=10mA, IR=10mA, Irr=1mA for 400 to 800 Volt devices (2) Measured at 1.0MHZ and applied reverse voltage of 4.0 Volts |