AZ386M-E1, AZ386MTR, AZ386P Selling Leads, Datasheet
MFG:BCD Package Cooled:SOP D/C:09+
AZ386M-E1, AZ386MTR, AZ386P Datasheet download
Part Number: AZ386M-E1
MFG: BCD
Package Cooled: SOP
D/C: 09+
MFG:BCD Package Cooled:SOP D/C:09+
AZ386M-E1, AZ386MTR, AZ386P Datasheet download
MFG: BCD
Package Cooled: SOP
D/C: 09+
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PDF/DataSheet Download
Datasheet: AZ386M-E1
File Size: 168851 KB
Manufacturer: BCDSEMI
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PDF/DataSheet Download
Datasheet: AZ317H-E1
File Size: 200091 KB
Manufacturer: BCD Semiconductor Manufacturing Limited
Download : Click here to Download
PDF/DataSheet Download
Datasheet: AZ386P-E1
File Size: 168851 KB
Manufacturer: BCDSEMI
Download : Click here to Download
The AZ386 is a power amplifier designed for use in low voltage consumer applications. The gain is internally set to 20 to keep external part count low, but the addition of an external resistor and capacitor between pin 1 and pin 8 will increase the gain to any value from 20 to 200.
The inputs are ground referenced while the output automatically biases to one-half the supply voltage. The quiescent power drain is only 24mW when operating from a 5V supply, making the AZ386 ideal for battery operation.
Parameter |
Symbol |
Value |
Unit | |
Power Supply Voltage |
VCC |
18 |
V | |
Package Dissipation (Note 2) |
PD |
AZ386P AZ386M |
1.25 0.73 |
W W |
Input Voltage Junction Temperature Storage Temperature Range |
VIN TJ TSTG |
-0.4 to 0.4 150 -55 to 150 |
V oC oC | |
Soldering Information |
|
DIP-8 Soldering (10 sec.) SOIC-8 (15 sec.) |
260 215 |
oC |
Thermal Resistance |
JA |
DIP-8 SOIC-8 |
107 172 |
oC/W |
Note 1: Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum Ratings" for extended periods may affect device reliability.
Note 2: For operation in ambient temperatures (TA) above 25oC, the device must be derated based on a 150oC maximum junction temperature and 1) a thermal resistance of 107oC/W junction to ambient for the Dual-in-Line package and 2) a thermal resistance of 172oC/W for the small outline package.