6DI30AH-060, 6DI30B050, 6DI30B-050 Selling Leads, Datasheet
MFG:DR.x6 Package Cooled:3 D/C:N/A
6DI30AH-060, 6DI30B050, 6DI30B-050 Datasheet download
Part Number: 6DI30AH-060
MFG: DR.x6
Package Cooled: 3
D/C: N/A
MFG:DR.x6 Package Cooled:3 D/C:N/A
6DI30AH-060, 6DI30B050, 6DI30B-050 Datasheet download
MFG: DR.x6
Package Cooled: 3
D/C: N/A
Want to post a buying lead? If you are not a member yet, please select the specific/related part number first and then fill the quantity and your contact details in the "Request for Quotation Form" on the left, and then click "Send RFQ".Your buying lead can then be posted, and the reliable suppliers will quote via our online message system or other channels soon.
TOP
PDF/DataSheet Download
Datasheet: 6DI100A-050
File Size: 159970 KB
Manufacturer: FUJI [Fuji Electric]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 6DI100A-050
File Size: 159970 KB
Manufacturer: FUJI [Fuji Electric]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 6DI30B-050
File Size: 160245 KB
Manufacturer:
Download : Click here to Download
6DI30B-050 is a kind of power transistor module. The typical applications include AC motor controls and air conditioners. There are some features as follows. First is including free wheeling diode. The second is high DC current gain. The last one is insulated type.
What comes next is about the maximum ratings. The VCBO (collector-base voltage) is 600 V. The VCEO (collector-emitter voltage) is 600 V. The VCEO(SUS) (collector-emitter voltage) is 450 V. The VEBO (emitter-base voltage) is 6 V. The IC (collector current) is 30 A and the ICP (collector pulsed current) is 60 A. The IB (base current) is 3 A and the IBP (base pulsed current) is 6 A. The PC (collector power consumption) is 200 W for one transistor and is 1200 W for six transistors. The Tstg (storage temperature) is from -40 to +125. The Tj (junction temperature) is +150.
The following is about the electrical characteristics (Ta=25). The minimum VCBO (collector-base voltage) is 600 V at ICBO=1 mA. The minimum VCEO(SUS) (collector-emitter voltage) is 450 V at IC=1 A and the minimum VCEX(SUS) (collector-emitter voltage) is 500 V at IC=30 A, VEB=6 V, ±IB=0.5 A. The minimum VEBO (emitter-base voltage) is 6 V at IEBO=200 mA. The maximum ICBO (collector cut-off current) is 1.0 mA at VCBO=600 V. The maximum IEBO (emitter cut-off current) is 200 mA at VEBO=6 V. The minimum hFE (DC current gain) is 100 at VCE=5 V, IC=30 A. The maximum VCE(sat) (collector-emitter saturation voltage) is 2.0 V at IC=30 A, IB=0.5 A. The maximum VBE(sat) (base-emitter saturation voltage) is 2.5 V at IC=30 A, IB=0.5 A.