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The 1N5711, 1N5712, 5082-2800/10/11 are passivated Schottky barrier diodes which use a patented "guard ring" design to achieve a high breakdown voltage. Packaged in a low cost glass package, they are well suited for high level detecting, mixing,switching, gating, log or A-D converting, video detecting,frequency discriminating,sampling, and wave shaping.
The 5082-2835 is a passivated Schottky diode in a low cost glass package. It is optimized for low turn-on voltage. The 5082-2835 is particularly well suited for the UHF mixing needs of the CATV marketplace.
The 5082-2300 Series and 5082-2900 devices are unpassivated Schottky diodes in a glass package. These diodes have extremely low 1/f noise and are ideal for low noise mixing, and high sensitivity detecting. They are particularly well suited for use in Doppler or narrow band video receivers.
5082-2800 Maximum Ratings
Junction Operating and Storage Temperature Range 5082-2303, -2900 .................................................. -60°C to +100°C 1N5711, 1N5712, 5082-2800/10/11 ...................... -65°C to +200°C 5082-2835 ............................................................. -60°C to +150°C DC Power Dissipation (Measured in an infinite heat sink at TCASE = 25°C) Derate linearly to zero at maximum rated temperature 5082-2303, -2900 ................................................................... 100 mW 1N5711, 1N5712, 5082-2800/10/11 ........................................ 250 mW 5082-2835 ................................................................................ 150 mW Peak Inverse Voltage .............................................................................. VBR
5082-2800 Features
• Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available