2SK2596, 2SK2597, 2SK2598 Selling Leads, Datasheet
MFG:Hitachi Package Cooled:Sot-89 D/C:09+
2SK2596, 2SK2597, 2SK2598 Datasheet download
Part Number: 2SK2596
MFG: Hitachi
Package Cooled: Sot-89
D/C: 09+
MFG:Hitachi Package Cooled:Sot-89 D/C:09+
2SK2596, 2SK2597, 2SK2598 Datasheet download
MFG: Hitachi
Package Cooled: Sot-89
D/C: 09+
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Datasheet: 2sk2596
File Size: 43112 KB
Manufacturer: hitachi
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PDF/DataSheet Download
Datasheet: 2SK0065
File Size: 75954 KB
Manufacturer: PANASONIC [Panasonic Semiconductor]
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PDF/DataSheet Download
Datasheet: 2SK2598
File Size: 282291 KB
Manufacturer: Toshiba
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Item | Symbol | Ratings | Unit |
Drain to source voltage | VDSX | 17 | V |
Gate to source voltage | VGSS | ±10 | V |
Drain current | ID | 0.4 | A |
Drain peak current | ID(pulse)*1 | 1 | A |
Channel dissipation | Pch*2 | 3 | W |
Channel temperature | Tch | 150 | |
Storage temperature | Tstg | 45 to +150 |
The 2SK2597 is designed as N-channel silicon power MOSFET for base station of 900 MHz band cellular phone power amplification.
It has seven features.The first one is that it would have high output and high gain which means Po= 100 W, Gl= 13 dB (TYP.) (f = 900 MHz) and Po= 90 W, Gl= 12 dB (TYP.) (f = 960 MHz).The second one is that it would have low intermodulation distortion.The third one is that it would covers all base station frequencies such as 800-MHz PDC and GSM.The fourth one is that it would have high-reliability gold electrodes.The fifth one is that it would have hermetic sealed package.The sixth one is that it would have internal matching circuit.The seventh one is that it would have push-pull structure.That are all the features.
Some absolute maximum ratings (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain to source voltage which would be 60 V.The second one is about its gate to source voltage which would be 7 V.The third one is about its drain current (DC) which would be 15 A.The fourth one is about its total power dissipation which would be 290 W.The fifth one is about its thermal resistance which would be 0.6 °C/W.The sixth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature which would be from 55 to +150 °C.Also there are some electrical characteristics (Ta = 25°C) about it.For example its gate leakage current would be max 1 A with condition of Vgs= 7 V.And its cut-off voltage would be min 1.5V and max 4V with condition of Vds= 5 V, Id= 50 mA.And its drain current which would be max 2mA with condition of Vds= 60 V.And so on.For more information please contact us.
Notes on Handling.This product internally uses beryllie porcelain (beryllium oxide). If powder or vapor of beryllium oxide enters your respiratory organs, you will have a difficulty in breathing, which is dangerous. Therefore, do no disassemble or chemically process the product.Be sure to abolish the product separately from general industrial wastes or garbage.
The 2SK2598 is designed as silicon N-channel MOS type (-MOSV) with typical applications of chopper regulator, DC-DC converter and motor drive applications.
It has four features.The first one is that it would have low drain-source ON-resistance which means Rds (ON) = 0.18 (typ.).The second one is that it would have high forward transfer admittance which means |Yfs| = 13 S (typ.).The third one is that it would have low leakage current which means Idss = 100 A (max) (VDS = 250 V).The fourth one is that it would have enhancement mode which means Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA).That are all the features.
Some absolute maximum ratings (Ta = 25°C) have been concluded into several points as folllow.The first one is about its drain-source voltage which would be 250 V.The second one is about its drain-gate voltage (RGS = 20 k) which would be 250 V.The third one is about its gate-source voltage which would be ±20 V.The fourth one is about its drain current which would be 13 A for DC and would be 52 A for pulse.The fifth one is about its drain power dissipation (Tc = 25°C) which would be 60 W.The sixth one is about its single pulse avalanche energy which would be 148 mJ.The seventh one is about its avalanche current which would be 13 A.The eighth one is about its repetitive avalanche energy which would be 6 mJ.The ninth one is about its channel temperature which would be 150 °C.The last one is about its storage temperature range which would be from -55 to 150 °C.
Something should be noted that using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/ current/ voltage, etc.) are within the absolute maximum ratings.And also about its drain current it should be noted that ensure that the channel temperature does not exceed 150°C.And about its single-pulse avalanche energy it should be noted that Vdd = 50 V,Tch = 25°C(initail), L = 1.48 mH, Rg = 25 , Iar = 13 A.About its repetitive avalanche energy it should be noted that repetitive rating: pulse width limited by maximum channel temperature.After all this transistor is an electrostatic-sensitive device.Please handle with caution.