MFG:Renesas Technology America Category:Discrete Semiconductor Products Package Cooled:SOT89 D/C:99
2SK2315TYTR, 2SK2316/KP, 2SK2316TD Datasheet download
Category: Discrete Semiconductor Products
MFG: Renesas Technology America
Package Cooled: SOT89
D/C: 99
Description: MOSFET N-CH 60V 2A UPAK
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PDF/DataSheet Download
Datasheet: 2SK0065
File Size: 75954 KB
Manufacturer: PANASONIC [Panasonic Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 2SK0065
File Size: 75954 KB
Manufacturer: PANASONIC [Panasonic Semiconductor]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 2SK0065
File Size: 75954 KB
Manufacturer: PANASONIC [Panasonic Semiconductor]
Download : Click here to Download
| Technical/Catalog Information | 2SK2315TYTR |
| Vendor | Renesas Technology America |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 2A |
| Rds On (Max) @ Id, Vgs | 450 mOhm @ 1A, 4V |
| Input Capacitance (Ciss) @ Vds | 173pF @ 10V |
| Power - Max | 1W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | - |
| Package / Case | UPAK |
| FET Feature | Logic Level Gate |
| Lead Free Status | Contains Lead |
| RoHS Status | RoHS Non-Compliant |
| Other Names | 2SK2315TYTR 2SK2315TYTR |
The 2SK2315TYTR is belongs to 2SK2315 family. There are some cautions to be taken attentions: products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. This product is not designed to be radiation resistant.
The features of 2SK2315 can be summarized as (1)low on-resistance; (2)high speed switching; (3)low drive current; (4)2.5 V gate drive device can be driven from 3 V source.; (5)suitable for DC-DC converter, motor drive, power switch, solenoid drive. It can be used in high speed power switching.
The absolute maximum ratings of 2SK2315 are (1)drain to source voltage(VDSS):60 V; (2)gate to source voltage (VGSS):±20 V; (3)drain current (ID):2 A; (4)drain peak current (ID(pulse))(*1: PW 10 ms, duty cycle 1 %):4 A; (5)body to drain diode reverse drain current(IDR):2 A; (6)channel dissipation (Pch*2: When using the alumina ceramic board (125 *20 * 07mm)):1 W; (7)channel temperature(Tch):150°C; (8)storage temperature(Tstg):55 to +150 °C.
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