MFG:ON Semiconductor Category:Discrete Semiconductor Products Package Cooled:DO201AD D/C:08+
1N5408G, 1N5408-M, 1N5408-MIC Datasheet download
Category: Discrete Semiconductor Products
MFG: ON Semiconductor
Package Cooled: DO201AD
D/C: 08+
Description: DIODE STD REC 3A 1000V DO-201AD
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PDF/DataSheet Download
Datasheet: 1N5408G
File Size: 48684 KB
Manufacturer: Vishay
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 1N5000
File Size: 90984 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
PDF/DataSheet Download
Datasheet: 1N5000
File Size: 90984 KB
Manufacturer: MICROSEMI [Microsemi Corporation]
Download : Click here to Download
| Technical/Catalog Information | 1N5408G |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Diode Type | Standard |
| Voltage - DC Reverse (Vr) (Max) | 1000V (1kV) |
| Current - Average Rectified (Io) | 3A |
| Voltage - Forward (Vf) (Max) @ If | 1V @ 3A |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 10A @ 1000V |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Mounting Type | Through Hole, Axial |
| Package / Case | DO-201AD, Axial |
| Packaging | Bulk |
| Capacitance @ Vr, F | - |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | 1N5408G 1N5408G 1N5408GOS ND 1N5408GOSND 1N5408GOS |
| Parameter | Test Conditions | Type | Symbol | Value | Unit |
| Repetitive peak reverse voltag e=Working peak reverse voltage =DC Blocking voltage |
1N5400G | VRRM =VRWM =VR |
50 | V | |
| 1N5401G | 100 | V | |||
| 1N5402G | 200 | V | |||
| 1N5403G | 300 | V | |||
| 1N5404G | 400 | V | |||
| 1N5405G | 500 | V | |||
| 1N5406G | 600 | V | |||
| 1N5407G | 800 | V | |||
| 1N5408G | 1000 | V | |||
| Peak forward surge current | IFSM | 125 | A | ||
| Average forward current | TA=55 | IFAV | 3 | A | |
| Junction and storage temperature range | Tj=Tstg | 65...+150 |
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