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1MBI160D-090A, 1MBI200-120, 1MBI200F-120

Table of contents:
Info of 1MBI160D-090A
Info of 1MBI200-120
Info of 1MBI200F-120

1MBI160D-090A, 1MBI200-120, 1MBI200F-120 Selling Leads, Datasheet

MFG:FUJI Package Cooled:MODULE D/C:N/A

1MBI160D-090A, 1MBI200-120, 1MBI200F-120 Picture

1MBI160D-090A, 1MBI200-120, 1MBI200F-120 Datasheet download

Five Points

Part Number: 1MBI160D-090A

MFG: FUJI

Package Cooled: MODULE

D/C: N/A

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1MBI200F-120 General Description

The 1MBI200F-120 is a type of IGBT module(F series),features of the 1MBI200F-120 are:(1)variety of power capacity series;(2)low saturation voltage;(3)voltage drive.

The absolute maximum ratings and electrical characteristics(Tj=25°C) of the 1MBI200F-120 can be summarized as:(1):collector-emitter voltage is 1200 V;(2):gate -emitter voltage is±20 V;(3):collect current(continuous) is 200A,c ont inuous(1ms) is 400A;(4):max. power dissipation is 1440 W;(5):operating temperature is +150°C;(6):storage temp erature is-40 °C+125°C;(7):isolation voltage(AC 1min) is 2500 V;(8):net.weight is 415g.Electrical characteristics:(1):zero gate voltage collector current is 4.0mA max when VGE is 0V and VCE is 1200V and Tc is 25°C;(2):gate-emit ter leackage current is 400nA max when VCE is 0V and VGE is±20V;(3):collector-emitter saturation voltage is 2.5V max when VGE is 15V and IC is 200A;(4):diode forward on-voltage is 2.5 V max when IF is 200A and VGE is 0V;(5): reverse recovery time is 350ns max when IF is 200A,dt is 600A/us and VGE is -10V;(6)reverse transfer capacitance is 36000pF typ when f is 1MHz.

All in all, this is a simple introduction of the device,If you are in terested in it,please pay more attention to our web!

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