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mPA835T

Features: • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA• High gain Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA Q2 : |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA• Flat-lead 6...

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SeekIC No. : 004425985 Detail

mPA835T: Features: • Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA• High gain Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, V...

mPA835T Data Sheet

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Part Number:
mPA835T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Description



Features:

• Low noise Q1 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA Q2 : NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• High gain Q1 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA Q2 : |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• Flat-lead 6-pin thin-type ultra super minimold package
• Built-in 2 different transistors (2SC5010, 2SC5006)


Specifications

SYMBOL PARAMETER Q1 Q2 UNIT
VCBO Collector to base voltage 9 20 V
VCEO Collector to emitter voltage 6 12 V
VEBO Emitter to base voltage 2 3 V
IC Collector current 30 100 mA
PT
Note		 Total Power Dissipation 180 in 1 element 200 in 1 element mW
PT
Note		 Total Power Dissipation
 230 in 2 elements
mW
Tj Junction temperature 150 150
Tstg Storage temperaturerange -65 to +150



Description

The mPA835TC has built-in two different transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.




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