Features: ` Advanced Process Technology` Ultra Low On-Resistance` Dynamic dv/dt Rating` 175Operating Temperature` Fast Switching` Fully Avalanche Rated` Lead-FreeSpecifications Parameter Max. Units ID @ TC = 25 Continuous Drain Current VGS @ -10V 12 A ID @ TC = 10...
lRL325PbF: Features: ` Advanced Process Technology` Ultra Low On-Resistance` Dynamic dv/dt Rating` 175Operating Temperature` Fast Switching` Fully Avalanche Rated` Lead-FreeSpecifications Parameter ...
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Parameter |
Max. |
Units | |
ID @ TC = 25 |
Continuous Drain Current VGS @ -10V |
12 |
A |
ID @ TC = 100 |
Continuous Drain Current VGS @ -10V |
8.5 | |
IDM |
Pulsed Drain Current |
48 | |
PD @ TC = 25 |
Power Dissipation |
80 |
W |
Linear Derating Factor |
0.53 |
W/ | |
VGS |
Gate-to-Source Voltage |
±16 |
V |
EAS |
Single Pulse Avalanche Energy |
130 |
mJ |
IAR |
Avalanche Current |
7.2 |
A |
EAR |
Repetitive Avalanche Energy |
8.0 |
mJ |
dv/dt |
Peak Diode Recovery dv/dt |
5.0 |
V/ns |
TJ TSTG |
Operating Junction Storage Temperature Range |
-55 to + 175 |
|
Soldering Temperature, for 10 seconds |
300 (1.6 mm from case ) | ||
Mounting torque, 6-32 or M3 screw |
10 lbf•in (1.1N•m) |
Fifth Generation HEXFETs lRL325PbF from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.