BC807-40

Transistor Polarity :
Collector- Emitter Voltage VCEO Max :
Emitter- Base Voltage VEBO :
Maximum DC Collector Current :
DC Collector/Base Gain hfe Min :
Configuration :
Maximum Operating Frequency :
Maximum Operating Temperature :
Mounting Style :
Package / Case :
Packaging : Reel


Features:

Ideally Suited for Automatic Insertion.
EpitaxialPlanar Die Construction.
For Switching, AF Driver and Amplifier Applications.
Complementary NPN Types Available (BC817).

Specifications

Part Number	BC807-40
Product Type	PNP
VCEO (V)	-45
IC(A)	-0.5
ICM (A)	-1
PD (W)	0.31
hFE Min	250
hFE Max	600
@I C (A)	-0.1
VCE(SAT) Max (mV)	-700
@ IC (A)	-0.5
@ IB (mA)	-50
fT Min (MHz)	100
RCE (SAT) (m)	-

PARAMETER	SYMBOL	VALUE	UNIT
Collector-Emitter Voltage	VCEO	-45	V
Emitter-Base Voltage	VEBO	-5.0	V
Collector Current	IC	-500	mA
Peak Collector Current	ICM	-1000	mA
Peak Base Current	IEM	-1000	mA
Power Dissipation atT = 50°C (Note 1)	Pd	310	mW
Thermal Resistance, Junction to Substrate Backside (Note 1)	RJSB	320	°C/W
Thermal Resistance, Junction to Ambient Air (Note 1)	RJA	403	°C/W
Operating and Storage Temperature Range	Tj :Tstg	-65 to +150

Description

BC807-40 is a type of NPN general purpose transistor which has two unique features: (1) high current which is max.500 mA; (2) low voltage which is max.45 V.

There are some maximum ratings about BC807-40.(1): collector-emitter voltage(VCEO) is 45 Vdc(open base and Ic is 10 mA); (2): collector-base voltage(VCBO)is -50 Vdc(open emitter); (3): emitter-base voltage(VEBO) is -5.0 Vdc(open collector); (4): collector current-DC(Ic) is -500 mAdc; (5): total power dissipation(Ptot) is 250 mW when Tamb is not higher than 25; (6): junction temperature(Tj) is 150; (7): storage temperature(Tstg) is -65 to 150.

Besides,there are still some electrical characteristics about BC807-40 when Ta is 25 unless otherwise noted.Off characteristics: (1): collector cutoff current(ICBO) is -100 nA max when VCB is -20 V and IE is 0; (2): emitter cut-off gain(IEBO) is -100 nA max when Ic is 0 and VEB is -5 V; (3): DC current gain(hFE) is 250 min and 600 max when VCE is -1 V and Ic is -100 mA;(4): collector emitter saturation voltage(VCE(sat)) is -700 mV max when Ic is -500 mA and IB is -50 mA; (5): base emitter voltage(VBE) is -1200 mV max when Ic is -500 mA and VCE is -1 V; (6): transition frequency(fT) is 80 MHz min when Ic is -10 mA, VCE is -5 V and f is 100 MHz.