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TGA4042-EPU

Features: ·Typical Frequency Range: 41 - 45 GHz·18 dBm Nominal P1dB·14 dB Nominal Gain·17 dB Nominal Return Loss·On-Chip Power Detector·Bias 6 V, 168 mA·0.25 um 2MI pHEMT Technology·Chip Dimensions 3.20 x 2.18 x 0.1 mm (0.126 x 0.086 x 0.004) in Application·Point-to-Point Radio·Military Radar Syst...

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SeekIC No. : 004518368 Detail

TGA4042-EPU: Features: ·Typical Frequency Range: 41 - 45 GHz·18 dBm Nominal P1dB·14 dB Nominal Gain·17 dB Nominal Return Loss·On-Chip Power Detector·Bias 6 V, 168 mA·0.25 um 2MI pHEMT Technology·Chip Dimensions ...

TGA4042-EPU Data Sheet

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Part Number:
TGA4042-EPU
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

·Typical Frequency Range:  41 - 45 GHz
·18 dBm Nominal P1dB
·14 dB Nominal Gain
·17 dB Nominal Return Loss
·On-Chip Power Detector
·Bias 6 V, 168 mA
·0.25 um 2MI pHEMT Technology
·Chip Dimensions 3.20 x 2.18  x 0.1 mm
    (0.126 x 0.086 x 0.004) in


Application

·Point-to-Point Radio
·Military Radar Systems
·Q Band Sat-Com


Specifications

SYMBOL PARAMETER VALUE NOTES
Vd Drain Voltage 8 V 2/
Vg Gate Voltage Range -5 TO 0 V  
Id Drain Current 294 mA 2/ 3/

Ig		 Gate Current 14 mA 3/
PIN Input Continuous Wave Power 21 dBm  
PD Power Dissipation 3.3 W 2/ 4/
TCH Operating Channel Temperature 150 5/ 6/
TM Mounting Temperature (30 Seconds) 320  
TSTG Storage Temperature -65 to 150  

1/ These ratings represent the maximum operable values for this device.
2/ Combinations of supply voltage, supply current, input power, and output
    power shall not exceed PD .
3/ Total current for the entire MMIC.
4/ When operated at this bias condition with a base plate temperature of
    70, the median life is  reduced to 1E+6 hrs.
5/ Junction operating temperature will directly affect the device median time
    to failure (MTTF).  For maximum life, it is recommended that junction
    temperatures be maintained at the lowest possible levels.
6/ These ratings apply to each individual FET.


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