Features: ·Excellent hFE linearity. ·Power dissipation:PCM=200mWApplicationNPN Silicon Epitaxial Planar Transistor. Specifications Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 32 V VEBO Emit...
2SC4097W: Features: ·Excellent hFE linearity. ·Power dissipation:PCM=200mWApplicationNPN Silicon Epitaxial Planar Transistor. Specifications Symbol Parameter Value Units VCBO Collec...
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Symbol |
Parameter |
Value |
Units |
VCBO |
Collector-Base Voltage |
40 |
V |
VCEO |
Collector-Emitter Voltage |
32 |
V |
VEBO |
Emitter-Base Voltage |
5 |
V |
IC |
Collector Current -Continuous |
500 |
mA |
PC |
Collector Dissipation |
200 |
mW |
Tj, Tstg |
Junction and Storage Temperature |
-55~150 |
|