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SD520S SD5100S

Features: Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current CapabilityLow Power Loss, High EfficiencyHigh Surge Current Capability For Use in Low Voltage, High FrequencyInverters, Free Wheeling, and PolarityProtection Applications.Specifications Character...

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SD520S SD5100S: Features: Schottky Barrier Chip Guard Ring Die Construction for Transient Protection High Current CapabilityLow Power Loss, High EfficiencyHigh Surge Current Capability For Use in Low Voltage, High ...

SD520S SD5100S Data Sheet

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Part Number:
SD520S SD5100S
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/25

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Product Details

Description



Features:

Schottky Barrier Chip
Guard Ring Die Construction for Transient Protection
High Current Capability
Low Power Loss, High Efficiency
High Surge Current Capability
For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications.




Specifications

Characteristic Symbol SD
520S		 SD
530S		 SD
540S		 SD
550S		 SD
560S		 SD
580S		 SD
5100S		 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage		 VRRM
VRWM
VR		 20 30 40 50 60 80 100 V
RMS Reverse Voltage VR(RMS) 14 21 28 35 42 56 70 V
Average Rectified Output Current     @TL = 75°C IO
5.0
 A
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) IFSM
100
 A
Forward Voltage (Note 1)                    @IF = 5.0A VFM 0.55 0.75 0.85 V
Peak Reverse Current                       @TA = 25°C
At Rated DC Blocking Voltage          @TA = 100°C		 IRM

0.2

20

 mA
Typical Junction Capacitance (Note 2) Cj
400
 pF
Typical Thermal Resistance Junction to Ambient RJA
50
 K/W
Operating Temperature Range Tj
-50 to +125
 °C
Storage Temperature Range TSTG
-50 to +150
 °C



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