Features: Schottky barrier chip Guard ring die construction for transient protection Low power loss, high efficiency High surge capability High current capability and low forward voltage drop For use in low voltage, high frequency inverters, free wheeling, and polarity protection application...
SD1006: Features: Schottky barrier chip Guard ring die construction for transient protection Low power loss, high efficiency High surge capability High current capability and low forward voltage drop ...
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Schottky barrier chip
Guard ring die construction for transient protection
Low power loss, high efficiency
High surge capability
High current capability and low forward voltage drop
For use in low voltage, high frequency inverters, free wheeling, and polarity protection application
Plastic material: UL flammability Classification rating 94V-0
Type Number |
Symbol |
SD 1002 |
SD 1003 |
SD 1004 |
SD 1006 |
Units |
Repetitive Peak Reverse Voltag Working Peak Reverse Voltage, @IR=1.0mA DC Blocking Voltage |
VRRM VRWM VR |
20 |
30 |
40 |
60 |
V |
RMS Reverse Voltage |
VR(RMS) |
28 |
42 |
V | ||
Average Rectified Output Current @TL = 90 |
IO |
1.0 |
A | |||
Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine- wave superimposed on rated load (JEDEC Method) |
IFSM |
25 |
A | |||
Typical Junction Capacitance (Note 2) |
Pd |
450 |
mW | |||
Typical Thermal Resistance Junction to Ambient Air (Note 2) |
RJA |
222 |
/W | |||
Operating Temperature Range |
Tj, TSTG |
-65 to + 125 |