LE28DW8102T

Applied conditions greater than those listed  under "absolute maximum Stress Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.

Storage Temperature                                                               :  -65ºC to +150ºC
D. C. Voltage on Any Pin to Ground Potential                           :  -0.5V to V_DD + 0.5V
Transient Voltage (<20 ns) on Any Pin to Ground Potential     :  -1.0V to V_DD + 1.0V
Package Power Dissipation Capability (Ta = 25ºC)                  :  1.0W
[Operating Range]
Ambient Temperature                                                               :  -40ºC to +80ºC
V_DD                                                                                           :  3.0V ±  0.3V
[AC condition of Test]                                                               
Input Rise/Fall Time                                                                  :  5 ns
Output Load·                                                                          :  C_L = 30 pF
(See Figures 10 and 11)

The LE28DW8102T  consists of two memory banks, 2 each 256K x 16 bits  sector mode flash EEPROM  manufactured with SANYO's proprietary, high performance FlashTechnology.

The LE28DW8102T writes with a 3.0-volt-only power supply.

The LE28DW8102T is divided into two separate memory banks, 2 each 512K x 16 Flash banks. Each Flash bank is typically used for program code storage and contains 256 sectors, each of 1K words or 8 blocks, each of 32K words. The Flash banks may also be used to store data.

Any bank may be used for executing code while writing data to a different bank. Each memory bank is controlled by separate Bank selection address (A18) lines.

The LE28DW8102T inherently uses less energy during Erase,and Program than alternative flash technologies. The total energy consumed is a function of the applied voltage, current,and  time of application. Since for any given voltage range, the Flash technology uses less current to program and has a shorter Erase time, the total energy consumed during any Erase or Program operation is less than alternative flash technolo-gies. The Auto Low Power mode automatically reduces the active read current to approximately the same as standby; thus,providing an average read current of approximately 1 mA/MHz of Read cycle time.

The Flash technology  provides fixed Erase and  Program  times,independent of the number of erase/program cycles that have occurred. Therefore the system software or hardware does not have to be modified or de-rated as is necessary with alternative flash technologies, whose Erase and Program times increase with accumulated erase/program cycles.