Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)• Solder dip 260 °C, 40 s (for TO-220AB, ...
VF20200C: Features: • Trench MOS Schottky technology• Low forward voltage drop, low power losses• High efficiency operation• Low thermal resistance• Meets MSL level 1, per J-STD-...
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Schottky (Diodes & Rectifiers) 20 Amp 100 Volt Dual TrenchMOS
For use in high frequency inverters, switching power supplies, freewheeling diodes, OR-ing diode, dc-to-dc converters and reverse battery protection.
PARAMETER | SYMBOL | V20200C | VF20200C | VB20200C | VI20200C | UNIT |
Maximum repetitive peak reverse voltage | VRRM | 200 | V | |||
Maximum average forward rectified current (Fig. 1) per device per diode |
IF(AV) | 20 10 |
A | |||
Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load |
IFSM | 120 | A | |||
Peak repetitive reverse current at tp = 2 s, 1 kHz per diode | IRRM | 0.5 | A | |||
Isolation voltage (ITO-220AB only) From terminal to heatsink t = 1 min |
VAC | 1500 | V | |||
Operating junction and storage temperature range | TJ, TSTG | - 40 to + 150 |