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UPDS1045

Features: ·Guard ring die construction for transient protection ·Low power loss, high efficiency ·Low forward voltage drop ·Low reverse leakage current ·High junction temperature capability ·High forward surge current capability ·Environmentally friendly molding compound (no Br, Sb) ·Low inductive...

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UPDS1045: Features: ·Guard ring die construction for transient protection ·Low power loss, high efficiency ·Low forward voltage drop ·Low reverse leakage current ·High junction temperature capability ·High fo...

UPDS1045 Data Sheet

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Part Number:
UPDS1045
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/22

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Product Details

Description



Features:

·Guard ring die construction for transient protection  
·Low power loss, high efficiency 
·Low forward voltage drop 
·Low reverse leakage current 
·High junction temperature capability 
·High forward surge current capability 
·Environmentally friendly molding compound (no Br, Sb) 
·Low inductive parasitics for minimal Ldi/dt effects 
·Lead-Free Finish & RoHS Compliant per EU Directive Rev 
  13.2.2003  (glass and high temperature solder exemptions 
  per Annex Notes 5 and 7 therein)


Application

·Silicon Schottky (hot carrier) rectifier for minimal trr
   and elimination of reverse-recovery oscillations
   to reduce need for EMI filtering 
·For use in high-frequency switching power
   supplies, inverters, free wheeling, polarity
   protection, and "O-Ring"application
·Low power loss and high efficiency 
·Robust package configuration for pick-and-place
   handling 
·Full-metallic bottom eliminates flux entrapment 
 


Specifications

`Junction and Storage Temperature (TJ , T STG ): -65 to +150 
`Average Rectified Output Current (IO):  10 Amps for Single
   phase, half wave, 60Hz, resistive or inductive load (also
   see Figure 5).  For capacitive load, derate current by 20%. 
`Peak Repetitive Reverse Voltage (V RRM):  45 V Working 
   Peak Reverse Voltage (VRWM):  45 V 
   DC Blocking Voltage (VR):  45 V 
`RMS Reverse Voltage (VR(RMS):32 V  
`Non-Repetitive Peak Forward Surge Current @ 8.3 ms
   Single half sine-wave Superimposed on Rated Load
   (IFSM ):  275A 
`Thermal Resistance Junction to case bottom (RJC) or 
   Soldering Point (RJS):  0.8/W 
`Thermal Resistance (RJA): 85/W (Note 1), 70 /W 
   (Note 2), 40/W (Note 3) junction to ambient air (see last
   page)  

Notes: 1.  FR-4 PCB, 2 oz. Copper, minimum recommended pad layout (pg 4)         
            2. Polyimide PCB, 2 oz. Copper, minimum recommended pad layout (pg 4)
           3.  Polyimide PCB, 2 oz. Copper with larger Cathode pad dimensions 
                 13.2 mm x 10.1 mm and Anode pad dimensions 4.0 mm x 2.2 mm





Description

The UPDS1045 offers a small and powerful surface mount package for a 45 Volt 10 Amp rated Schottky with very low rd voltage and low leakage current.  For critical applications requiring very fast switching, these Schottky higher reverse e ratings with their "hot carrier"features provide extremely fast switching to replace conventional ultrafast rectifiers.  The very low thermal resistance of the PowerDITM5 package design permits cooler operating junction temperatures for imal reverse leakage currents and lower power loss.




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