Mounting Style
: Through Hole
Rated Repetitive Off-State Voltage VDRM
: +/- 90 V
Maximum Operating Temperature
: + 150 C
Breakover Current IBO Max
: +/- 600 mA
Breakover Voltage VBO
: +/- 115 V
Off-State Leakage Current @ VDRM IDRM
: +/- 5 uA
Holding Current (Ih Max)
: +/- 600 mA
On-State Voltage
: +/- 3 V
Non Repetitive On-State Current
: 30 A, 32 A
Off-State Capacitance CO
: 36 pF to 86 pF
Package / Case
: DO-92
Specifications
| Rating |
Value |
Symbol |
Unit |
Repetitive peak off-state voltage, (see Note 1)
'4070
'4080
'4095
'4115
'4125
'4145
'4165
'4180
'4220
'4240
'4250
'4260
'4290
'4300
'4350
'4395
'4400 |
± 58
± 65
± 75
± 90
±100
±120
±135
±145
±160
±180
±190
±200
±220
±230
±275
±320
±300 |
VDRM |
V |
Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)
2/10 s (GR-1089-CORE, 2/10 s voltage wave shape) 300
8/20 s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 220
10/160 s (FCC Part 68, 10/160 s voltage wave shape) 120
5/200 s (VDE 0433, 10/700 s voltage wave shape) 110
0.2/310 s (I 31-24, 0.5/700 s voltage wave shape) 100
5/310 s (ITU-T K.20/21, 10/700 s voltage wave shape) 100
5/310 s (FTZ R12, 10/700 s voltage wave shape) 100
5/320 s (FCC Part 68, 9/720 s voltage wave shape) 100
10/560 s (FCC Part 68, 10/560 s voltage wave shape) 75
10/1000 s (GR-1089-CORE, 10/1000 s voltage wave shape) 50 |
ITSP |
A |
Non-repetitive peak on-state current (see Notes 2, 3 and 5)
20 ms (50 Hz) full sine wave
16.7 ms (60 Hz) full sine wave
1000 s 50 Hz/60 Hz a.c. |
30
32
2.1 |
ITSM |
A |
| Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A |
300 |
diT/dt |
A/s |
| Junction temperature |
-40 to +150 |
TJ |
|
| Storage temperature range |
-65 to +150 |
Tstg |
|
NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.
2. Initially the TISP4xxxM3LM must be in thermal equilibrium with TJ = 25 °C.
3. The surge may be repeated after the TISP4xxxM3LM returns to its initial conditions.
4. See Applications Information and Figure 11 for current ratings at other temperatures.
5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/ for ambient temperatures above 25 °C
DescriptionThis TISP® device TISP4115M3LM series protects central office, access and customer premise equipment against overvoltages on the telecom line. The TISP4xxxM3LM is available in a wide range of voltages and has a medium current capability. These protectors have been specified mindful of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950, IEC 60950, ITU-T K.20, K.21 and K.45. The TISP4350M3LM meets the FCC Part 68 "B" ringer voltage requirement and survives the Type B impulse tests. These devices are housed in a through-hole DO-92 package (TO-92 package with cropped center leg).
Parameters: | Technical/Catalog Information | TISP4115M3LM |
| Vendor | Bourns Inc. |
| Category | Circuit Protection |
| Package / Case | TO-92 |
| Packaging | Bulk |
| Capacitance | 120pF |
| Voltage - Breakover | 115.0V |
| Current - Peak Pulse (8 x 20s) | 220A |
| Current - Peak Pulse (10 x 1000s) | 50A |
| Number of Circuits | 1 - Single |
| Voltage - Off State | 90V |
| Other Names | TISP4115M3LM
TISP4115M3LM
|
TISP4115M3LM Data Sheet
