TISP4015H1BJ

Specifications Rating Symbol Value Unit Repetitive peak off-state voltage 'AE401'AE403'AE404 VDRM ±8±15±25 V Non-repetitive peak on-state pulse current(see Notes 1 and 2)2/10 s(Telcordia GR-1089-CORE, 2/10|s voltage wave shape)8/20s (IEC 61000-4-5, combination wave gen...

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TISP4015H1BJ: Specifications Rating Symbol Value Unit Repetitive peak off-state voltage 'AE401'AE403'AE404 VDRM ±8±15±25 V Non-repetitive peak on-state pulse current(see Notes 1 and 2...

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Part Number:
TISP4015H1BJ
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/1/11

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Product Details

Description



Specifications

Rating
Symbol
Value
Unit
Repetitive peak off-state voltage 'AE401
'AE403
'AE404
VDRM
±8
±15
±25
V
Non-repetitive peak on-state pulse current(see Notes 1 and 2)
2/10 s(Telcordia GR-1089-CORE, 2/10|s voltage wave shape)
8/20s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
10/160s (FCC Part 68, 10/160 |s voltage wave shape)
5/310 s (ITU-T K.20/45/21, 10/700|s voltage wave shape)
5/320 s(FCC Part 68, 9/720|s voltage wave shape)
10/560s (FCC Part 68, 10/560 |s voltage wave shape)
10/1000s(Telcordia GR-1089-CORE, 10/1000|s voltage wave shape)
ITSP
±500
±400
±200
±150
±150
±125
±100
A
Non-repetitive peak on-state current(see Notes 1 and 2)
20ms (50Hz) full sine wave
16.7ms (60Hz) full sine wave
0.2s 50Hz/60Hz a.c.
2s 50 Hz/60Hz a.c.
1000s 50Hz/60Hz a.c.
ITSM
45
50
21
7
2
A
Initial rate of rise of current (2/10 waveshape)
di/dt
450
A/s
Junction temperature
TJ
-40 to +150
Storage temperature range
Tstg
-65 to +150
NOTES:1.Initially the device must be in thermal equilibrium with TJ=25
2.The surge may be repeated after the device returns to its initial conditions.


Rating
Symbol
Value
Unit
Repetitive peak off-state voltage 'AE401
'AE403
'AE404
VDRM
±8
±15
±25
V
Non-repetitive peak on-state pulse current(see Notes 1 and 2)
2/10 s(Telcordia GR-1089-CORE, 2/10|s voltage wave shape)
8/20s (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current)
10/160s (FCC Part 68, 10/160 |s voltage wave shape)
5/310 s (ITU-T K.20/45/21, 10/700|s voltage wave shape)
5/320 s(FCC Part 68, 9/720|s voltage wave shape)
10/560s (FCC Part 68, 10/560 |s voltage wave shape)
10/1000s(Telcordia GR-1089-CORE, 10/1000|s voltage wave shape)
ITSP
±500
±400
±200
±150
±150
±125
±100
A
Non-repetitive peak on-state current(see Notes 1 and 2)
20ms (50Hz) full sine wave
16.7ms (60Hz) full sine wave
0.2s 50Hz/60Hz a.c.
2s 50 Hz/60Hz a.c.
1000s 50Hz/60Hz a.c.
ITSM
45
50
21
7
2
A
Initial rate of rise of current (2/10 waveshape)
di/dt
450
A/s
Junction temperature
TJ
-40 to +150
Storage temperature range
Tstg
-65 to +150
NOTES:1.Initially the device must be in thermal equilibrium with TJ=25
2.The surge may be repeated after the device returns to its initial conditions.







Description

These devices TISP4015H1BJ are designed to limit overvoltages on digital telecommunication lines. Overvoltages are normally seda.c. power system or lightning flash disturbances which are induced or conducted on to the telephone line. A single device s 2-point protection and is typically used for the protection of transformer windings and low voltage electronics.

The protector TISP4015H1BJ consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by wn clamping until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on-state condition. This low-voltage on state causes the current resulting from the overvoltage to be safely diverted through the device. The device switches off when the diverted current falls below the holding current value.






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