MX29L1611

Features:

3.3V±10% for write and read operation
11V Vpp erase/programming operation
Endurance: 100 cycles
Fast random access time: 90ns/100ns/120ns
Fast page access time: 30ns (Only for 29L1611PC-90/10/12)
Sector erase architecture
- 32 equal sectors of 64k bytes each
- Sector erase time: 200ms typical
Auto Erase and Auto Program Algorithms
- Automatically erases any one of the sectors or the whole chip
- Automatically programs and verifies data at specified addresses


Pinout




Specifications

RATING VALUE
Ambient Operating Temperature 0 to 70
Storage Temperature -65 to 125
Applied Input Voltage -0.5V to Vcc+0.5V
Applied Output Voltage -0.5V to Vcc+0.6V
VCC to Ground Potential -0.5V to 4.0V
A9 -0.5V to 12.5V
BYTE/VPP -0.5V to 11.5V


Description

The MX29L1611G is a 16-mega bit Flash memory organized as either 1M wordx16 or 2M bytex8.  The MX29L1611G includes 32 sectors of 64KB(65,536 Bytes or 32,768 words).  MXIC's Flash memories offer the most cost-effective and reliable read/write non-volatile random access memory.  The MX29L1611G  is packaged in 42 pin PDIP.
The standard MX29L1611G offers access times as fast as 100ns,allowing operation of high-speed microprocessors without wait. To eliminate bus contention,the MX29L1611G has separate chip enable CE and, output enable (OE).
MXIC's Flash memories augment EPROM functionality with electrical erasure and programming. The MX29L1611G uses a command register to manage this functionality.