MMBTA06

Transistors Bipolar (BJT) SOT-23 NPN GEN PUR

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SeekIC No. : 00203746 Detail

MMBTA06: Transistors Bipolar (BJT) SOT-23 NPN GEN PUR

floor Price/Ceiling Price

US $ .04~.11 / Piece | Get Latest Price
Part Number:
MMBTA06
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.11
  • $.09
  • $.05
  • $.04
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/26

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Product Details

Quick Details

Transistor Polarity : NPN Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 4 V Maximum DC Collector Current : 0.5 A
DC Collector/Base Gain hfe Min : 100 Configuration : Single
Maximum Operating Frequency : 100 MHz Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT Package / Case : SOT-23
Packaging : Reel    

Description

Transistor Polarity : NPN
DC Collector/Base Gain hfe Min : 100
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Frequency : 100 MHz
Package / Case : SOT-23
Collector- Emitter Voltage VCEO Max : 80 V
Emitter- Base Voltage VEBO : 4 V
Maximum DC Collector Current : 0.5 A


Features:

·Driver transistors.
·NPN silicon.





Specifications

SYMBOL PARAMETER RATING UNIT
VCBO Collector to base voltage 80 V
VCEO Collector to emitter voltage 80 V
VEBO Emitter to base voltage 4.0 V
IC Collector current 500 mA
PD Total Device Dissipation FR-5 Board
(* 1) @TA = 25
Derate above 25
225
1.8
mA
RèJA Thermal Resistance, Junction-to-Ambient 556 /W
PD Total Device Dissipation Alumina
Substrate, (* 2)
@TA = 25
Derate above 25
300
2.4
mW
mW/
RèJA Thermal Resistance, Junction-to-Ambient 417 /W
Tj Junction temperature 150
Tstg Storage temperaturerange -55to+150


Part Number MMBTA06
Product Type NPN
VCEO (V) 80
IC (A) 0.5
ICM (A) -
PD (W) 0.3
hFE Min 100
hFE Max -
@ IC (A) 0.1
VCE (SAT) Max (mV) 250
@ IC (A) 0.1
@ IB (mA) 10
fT Min (MHz) 100
RCE (SAT) (m) -





Parameters:

Technical/Catalog InformationMMBTA06
VendorFairchild Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)80V
Current - Collector (Ic) (Max)500mA
Power - Max350mW
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic250mV @ 10mA, 100mA
Frequency - Transition100MHz
Current - Collector Cutoff (Max)100nA
Mounting TypeSurface Mount
Package / CaseSOT-23
PackagingCut Tape (CT)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names MMBTA06
MMBTA06
MMBTA06FSCT ND
MMBTA06FSCTND
MMBTA06FSCT



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