ITS612N1

On Time (Max) :
Off Time (Max) :
Operating Supply Voltage :
Maximum Operating Temperature : + 85 C
Mounting Style : Through Hole
Number of Outputs : 2
Package / Case : TO-220AB-7
On Resistance (Max) : 0.16 Ohms
Supply Current (Max) : 0.6 mA


Features:

·Overload protection
·Current limitation
·Short circuit protection
·Thermal shutdown
·Overvoltage protection (including load dump)
·Fast demagnetization of inductive loads
·Reverse battery protection¹⁾
·Undervoltage and overvoltage shutdown with auto-restart and hysteresis
·Open drain diagnostic output
·Open load detection in OFF-state
·CMOS compatible input protection
·Loss of ground and loss of V_bb
·Electrostatic discharge (ESD) protection



Application

`C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial applications
`All types of resistive, inductive and capacitve loads 
`Replaces electromechanical relays, fuses and discrete circuits

Specifications

Parameter	Symbol	Values	Unit
Supply voltage (overvoltage protection see page 4)	Vbb	43	V
Supply voltage for full short circuit protection Tj =-40 ...+150	Vbb	34	V
Load dump protection2) VLoadDump = UA + Vs , UA = 13.5 V RI3) = 2, RL = 5.3, td = 200 ms, IN= low or high	VLoaddump4)	60	V
Load current (Short circuit current, see page 5)	IL	self-limited	A
Junction temperature Operating temperature range Storage temperature range	Tj Ta Tstg	+150 -30...+85 -40 ...+105
Power dissipation (DC), TC25	Ptot	36	W
Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,Tstart = 150 TC = 150 one channel, IL= 2.3 A, ZL = 89 mH, 0: both channels parallel, IL = 4.4 A, ZL = 47 mH, 0: see diagrams on page 9	EAS	290 580	mJ
Electrostatic discharge capability (ESD) IN: (Human Body Model) all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993	VESD	1.0 2.0	kV
Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 7	VIN I IN IST	-10 ... +16 ±2.0 ±5.0	V mA

Description

N channel vertical power FET ITS612N1 with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions.

Parameters:

Technical/Catalog Information	ITS612N1
Vendor	Infineon Technologies
Category	Integrated Circuits (ICs)
Package / Case	TO-220-5 (Bent and Staggered Leads)
Mounting Type	Through Hole
Type	High Side
Voltage - Supply	5 V ~ 34 V
On-State Resistance	160 mOhm
Current - Output / Channel	2.3A
Current - Peak Output	7.5A
Packaging	Tube
Input Type	Non-Inverting
Number of Outputs	2
Operating Temperature	-30°C ~ 85°C
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	ITS612N1 ITS612N1