IRF3515L

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Series: HEXFET®
Drain to Source Voltage (Vdss): 150V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Packaging: Tube
Mounting Type: Through Hole
Gate Charge (Qg) @ Vgs: 107nC @ 10V
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Current - Continuous Drain (Id) @ 25° C: 41A
Power - Max: 200W
Manufacturer: International Rectifier
Supplier Device Package: TO-262
Rds On (Max) @ Id, Vgs: 45 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds: 2260pF @ 25V


Features:

·Low Gate Charge Qg results in Simple Drive Requirement
·Improved  Gate, Avalanche and dynamic dv/dt Ruggedness
·Fully Characterized Capacitance and Avalanche Voltage and CurrentEffective Coss Specified (See AN 1001)


Application

·Switch Mode Power Supply (SMPS)
·Uninterruptible Power Supply
·High speed power switching


Specifications

	Parameter	Max.	Units
ID @ TC =25	Continuous Drain Current,VGS @ 10V	41	A
ID @ TC =100	Continuous Drain Current,VGS @ 10V	29
IDM	Pulsed Drain Current	164
PD @ TC =25	Power Dissipation	200	W
	Linear Derating Factor	1.3	W/
VGS	Gate-to-Source Voltage	±30	V
dv/dt	Peak Diode Recovery dv/dt	4.3	V/ns
TJ TSTG	Junction and Storage Temperature Range	-55 to + 175
	Soldering Temperature, for 10 seconds	300 (1.6mm from case )