Features: • Low gate charge for fast switching applications• N-channel enhancement - normal level• 175 °C operating temperature• Avalanche rated• Pb-free lead plating, RoHS compliantSpecifications Parameter Symbol Rating Unit Continuous Drain Curren...
IPP080N06N: Features: • Low gate charge for fast switching applications• N-channel enhancement - normal level• 175 °C operating temperature• Avalanche rated• Pb-free lead plating, ...
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Parameter | Symbol | Rating | Unit |
Continuous Drain Current, Tc = 25 | ID | 80 | A |
Continuous Drain Current,Tc = 100 | ID | 76 | A |
Pulsed drain current TC=25 2) | ID,pulse | 320 | A |
Avalanche energy, single pulse I D=80 A, RGS=25 |
EAS | 448 | mJ |
Reverse diode dv /dt I D=80 A, VDS=48 V, di /dt =200 A/s, T j,max=175 |
dv/dt | 6 | KV/ns |
Gate source voltage T C=25 | VGS | ±20 | V |
Power dissipation | Ptot | 214 | W |
Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to + 175 | |
IEC climatic category; DIN IEC 68-1 | 55/175/56 |