MOSFET N-Channel MOSFET 20-200V
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 25 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 50 A | ||
Resistance Drain-Source RDS (on) : | 5.9 m Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Reel |
Parameter |
Symbol |
Conditions |
Value |
Unit |
Continuous drain current |
ID |
TC=252) |
50 |
A |
TC=100 |
50 | |||
Pulsed drain current |
ID,pulse |
TC=253) |
350 | |
Avalanche energy, single pulse |
EAS |
ID=9.3 A, RGS=25 |
600 |
mJ |
MOSFET dv /dt ruggedness |
dv /dt |
I D=30 A, V DS=20 V, di /dt =200 A/s, T j,max=175 |
6 |
kV/s |
Gate source voltage4) |
VGS |
static |
±20 |
V |
Power dissipation |
Ptot |
TC=25 |
115 |
W |
Operating and storage temperature |
Tj, Tstg |
-55 ... 175 | ||
IEC climatic category; DIN IEC 68-1 | 55/175/56 |