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HUFA76645S3S

MOSFET 75a 100V 0.015 Ohm Logic Level N-Ch

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SeekIC No. : 00163046 Detail

HUFA76645S3S: MOSFET 75a 100V 0.015 Ohm Logic Level N-Ch

HUFA76645S3S Data Sheet

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Part Number:
HUFA76645S3S
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
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Upload time: 2024/5/31

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 100 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.012 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-263AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 100 V
Packaging : Tube
Gate-Source Breakdown Voltage : +/- 16 V
Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.012 Ohms
Package / Case : TO-263AB


Features:

• Ultra Low On-Resistance
  - r DS(ON) = 0.014, VGS = 10V
  - r DS(ON) = 0.015, VGS = 5V
• Simulation Models
  - Temperature Compensated PSPICE® and SABER™Electrical Models
  - Spice and SABER Thermal Impedance Models
  - www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Switching Time vs RGS Curves


Specifications

Drain to Source Voltage (Note 1)............................ VDSS 100V
Drain to Gate Voltage (RGS = 20k) (Note 1)  ..................... VDGR 100V
Gate to Source Voltage   ................................ VGS ±16 V
Drain Current
Continuous (TC = 25, VGS = 5V)   ............................. ID75A
Continuous (TC = 25, VGS = 10V) (Figure 2) ........................ID75A
Continuous (TC = 100, VGS = 5V)  .............................ID63A
Continuous (TC = 100, VGS = 4.5V) (Figure 2) .......................ID62A
Pulsed Drain Current  .................................IDM Figure 4
Pulsed Avalanche Rating ...........................UIS Figures 6, 17, 18
Power Dissipation .....................................PD310W
Derate Above 25 ....................................2.07W/
Operating and Storage Temperature.....................TJ,TSTG -55 to 175
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s........................TL300
Package Body for 10s, See Techbrief TB334 .......................Tpkg260
NOTES:
1. TJ = 25 to 150.
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.





Parameters:

Technical/Catalog InformationHUFA76645S3S
VendorFairchild Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs14 mOhm @ 75A, 10V
Input Capacitance (Ciss) @ Vds 4400pF @ 25V
Power - Max310W
PackagingTube
Gate Charge (Qg) @ Vgs153nC @ 10V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names HUFA76645S3S
HUFA76645S3S



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